Rainbow Electronics AT28C040 - Manual

1
LCC
Top View
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
6 5 4 3 2 1
44 43 42 41 40
18 19 20 21 22 23 24 25 26 27 28
A0
I/O0 I/O1 I/O2 VSS
NC
I/O3 I/O4 I/O5 I/O6 I/O7
A15 A16 A18 NC NC NC VCC WE NC A17 A14
Features
• Read Access Time - 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time - 10 ms Maximum
– 1 to 256 Byte Page Write Operation
• Low Power Dissipation
– 80 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• Single 5V
±
10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout
Description
The AT28C040 is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 440 mW.
Rev. 0542B–10/98
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
SIDE BRAZE,
FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(continued)
4-Megabit
(512K x 8)
Paged Parallel
EEPROMs
AT28C040