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Rainbow Electronics DS1258Y_AB User Manual

Rainbow Electronics Storage

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E

Copyright 1995 by Dallas Semiconductor Corporation.

All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor data books.

DS1258Y/AB

128K x 16 Nonvolatile SRAM

DS1258Y/AB

PRODUCT PREVIEW

100395 1/9

FEATURES

10 year minimum data retention in the absence of
external power

Data is automatically protected during a power loss

Separate upper byte and lower byte chip select inputs

Unlimited write cycles

Low–power CMOS

Read and write access times as fast as 70 ns

Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time

Full

±

10% operating range (DS1258Y)

Optional

±

5% operating range (DS1258AB)

Optional industrial temperature range of –40

°

C to

85

°

C, designated IND

PIN ASSIGNMENT

40–PIN ENCAPSULATED PACKAGE

740 MIL EXTENDED

OE

CEU

CEL

WE

V

CC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A16

DQ15

DQ14

DQ13

DQ11

DQ10

DQ9

DQ8

GND

DQ7

DQ5

DQ4

22

21

DQ12

DQ3

DQ2

DQ1

DQ0

DQ6

A15

A14

A13

A12

A11

A10

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

GND

PIN DESCRIPTION

A0–A16

– Address Inputs

DQ0–DQ15

– Data In/Data Out

CEU

– Chip Enable Upper Byte

CEL

– Chip Enable Lower Byte

WE

– Write Enable

OE

– Output Enable

V

CC

– Power Supply (+5V)

GND

– Ground

DESCRIPTION

The DS1258 128K x 16 Nonvolatile SRAMs are
2,097,152 bit fully static, nonvolatile SRAMs, organized
as 131,072 words by 16 bits. Each NV SRAM has a self
contained lithium energy source and control circuitry
which constantly monitors V

CC

for an out–of–tolerance

condition. When such a condition occurs, the lithium
energy source is automatically switched on and write

protection is unconditionally enabled to prevent data
corruption. DIP–package DS1258 devices can be used
in place of solutions which build nonvolatile 128K x 16
memory by utilizing a variety of discrete components.
There is no limit to the number of write cycles which the
DS12658Y/AB can accept, and no additional support
circuitry is required for microprocessor interfacing.