Rainbow Electronics W27E520 - Manual

Advance Information W27E520
64K
××
8 ELECTRICALLY ERASABLE EPROM
Publication Release Date: 4/26/2000
- 1 - Revision A1
GENERAL DESCRIPTION
The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only
Memory organized as 65,536
×
8 bits. It includes latches for the lower 8 address lines to multiplex
with the 8 data lines. To cooperate with the MCU, this device could save the external TTL
component, also cost and space. It requires only one supply in the range of 4.5V to 5.5V in normal
read mode. The W27E520 provides an electrical chip erase function. It will be a great convenient
when you need to change/update the contents in the device.
FEATURES
• High speed access time: 70/90 nS (max.)
• Read operating current: 20 mA (max.)
• Erase/Programming operating current
30 mA (max.)
• Standby current: 100
µ
A (max.)
• Unregulated battery power supply range,
4.5V to 5.5V
• +13V erase and programming voltage
•
High Reliability CMOS Technology
- 2K V ESD Protection
- 200 mA Latchup Immunity
• Fully static operation
• All inputs and outputs directly LVTTL/CMOS
compatible
• Three-state outputs
•
Available p ackages: 20-pin TSSOP and 20-pin
SOP
PIN CONFIGURATIONS
1
2
3
4
5
6
7
8
18
19
20
13
14
15
16
17
11
12 9
10
AD2
AD0
AD7
GND
AD6
AD4
AD1
AD3
AD5
A9
A11
A13
A15
OE/VPP
ALE
A14
A12
V DD TSSOP
Top View
A10 A8
18
19
20 1
2
3
4
5
6
7
8 13
14
15
17
11
12 9
10
AD5
AD0
A10
A8
AD1
AD3
ALE
A14
A12
GND
AD6
AD4
AD2
A11
A13
A15
SOP
Top View
A9
OE/VPP VDD
AD7
16
BLOCK DIAGRAM
ALE
OE / V
CONTROL
GND
V DD
PP
AD7 - AD0
OUTPUT
BUFFER
DECODER
L
A
T
C
H
E
S
A15 - A8
MEMORY
ARRAY
PIN DESCRIPTION
SYMBOL DESCRIPTION
AD0
−
AD7 Address/Data Inputs/Outputs
A8
−
A15 Address Inputs
ALE Address Latch Enable
OE /V PP
Output Enable, Program/Erase
Supply Voltage
V DD Power Supply
GND Ground