Rainbow Electronics AT25DQ321 - Manual (Page 56)

56 AT25DQ321 [DATASHEET]
8718D–DFLASH–12/2012
13.6 Program and Erase Characteristics
Notes: 1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.
2. Not 100% tested. (Value guaranteed by design and characterization)
13.7 Power-up Conditions
13.8 Input Test Waveforms and Measurement Levels
13.9 Output Test Load
Symbol Parameter Min Typ Max Units
t
PP
(1) Page Program Time (256-bytes) 1.5 3.0 ms
t
BP
Byte Program Time 7 μs
t
BLKE
(1) Block Erase Time
4KB 50 200
ms 32KB 250 600
64KB 400 950
t
CHPE
(1)(2) Chip Erase Time 25 40 sec
t
SUSP
Suspend Time
Program 10 20
μs
Erase 25 40
t
RES
Resume Time
Program 10 20
μs
Erase 12 20
t
OTPP
(1) OTP Security Register Program Time 200 500 μs
t
WRSR
(2) Write Status Register Time 200 ns
t
WRCR
Write Configuration Register Time 15 35 ms
Symbol Parameter Min Max Units
t
VCSL
Minimum V
CC
to Chip Select Low Time 70 μs
t
PUW
Power-Up Device Delay Before Program or Erase Allowed 10 ms
V
POR
Power-On Reset Voltage 1.5 2.5 V
AC
Driving
Levels
AC
Measurement
Level
0.1V
CC
V
CC
/2
0.9V
CC
t
R
, t
F
< 2ns (10% to 90%)
Device
Under
Test
15pF (Frequencies above 70MHz)
or
30pF