Write operations – Rainbow Electronics AT45DB161D User Manual
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35
3500O–DFLASH–11/2012
AT45DB161D
21.7
Command Sequence for Read/Write Operations for Page Size 512-Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
21.8
Command Sequence for Read/Write Operations for Page Size 528-Bytes (Except Status
Register Read, Manufacturer and Device ID Read)
22.
Write Operations
The following block diagram and waveforms illustrate the various write sequences available.
SI (INPUT)
CMD 8-bits
8-bits
8-bits
Page Address
(A20 - A9)
X X X X X X X
X X X X X X X X X
LSB
X X X X X X X X
Byte/Buffer Address
(A8 - A0/BFA8 - BFA0)
MSB
Don’t Care
Bits
Page Address
(PA11 - PA0)
Byte/Buffer Address
(BA9 - BA0/BFA9 - BFA0)
SI (INPUT)
CMD 8-bits
8-bits
8-bits
X X X X X X X X
X X X X
LSB
X X X X X X X X
MSB
2 Don’t Care
Bits
X X X X
FLASH MEMORY ARRAY
PAGE (512-/528-BYTES)
BUFFER 2 (512-/528-BYTES)
BUFFER 1 (512-/528-BYTES)
I/O INTERFACE
SI
BUFFER 1 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 2 TO
MAIN MEMORY
PAGE PROGRAM
BUFFER 1
WRITE
BUFFER 2
WRITE