Rainbow Electronics W9864G6GB User Manual
Page 3
W9864G6GB
Publication Release Date: August 14, 2006
- 3 -
Revision A01
1. GENERAL
DESCRIPTION
W9864G6GB is a high-speed synchronous dynamic random access memory (SDRAM), organized as
1M words
× 4 banks × 16 bits. Using pipelined architecture and 110nm process technology,
W9864G6GB delivers a data bandwidth of up to 286MHz bytes per second (-7). The -7 parts can run
up to 143MHz/CL3.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE
command. Column addresses are automatically generated by the SDRAM internal counter in burst
operation. Random column read is also possible by providing its address at each clock cycle. The
multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance.
2. FEATURES
• The -7 grade can support 2.7V〜3.6V power supply
• 1048576
words
× 4 banks × 16 bits organization
• Self Refresh Current: Standard and Low Power
• CAS latency: 3
• Burst Length: 1, 2, 4, 8, and full page
• Sequential and Interleave burst
• Burst read, single write operation
• Byte data controlled by DQM
• Power-down
Mode
• Auto-precharge and controlled precharge
• 4K refresh cycles/64 mS
• Interface:
LVTTL
• Package: VFBGA 60 balls pitch=0.65
• W9864G6GB
is
using lead free materials with RoHS
3. AVAILABLE PART NUMBER
PART
NUMBER
SPEED (CL = 3)
SELF REFRESH CURRENT
(MAX.)
OPERATING
TEMPERATURE
W9864G6GB-7 143
MHz
2mA
0°C ~ 70°C