Rainbow Electronics MAX19985A - Manual (Page 16)

MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
16 ______________________________________________________________________________________
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc80
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-50
-40
-20
-60
700 1200
T C = +85°C
T C = -30°C T C = +25°C
V CC = 3.3V
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc81
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-50
-40
-20
-60
700 1200
P
LO
= -3dBm, 0dBm, +3dBm
V CC = 3.3V
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc82
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-50
-40
-20
-60
700 1200
V CC = 3.6V
V CC = 3.0V
V CC = 3.3V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc83
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-20
-50
-40
-10
-60
700 1200
T
C
= -30°C, +25°C, +85°C
V CC = 3.3V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc84
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-20
-50
-40
-10
-60
700 1200
P LO = -3dBm, 0dBm, +3dBm
V CC = 3.3V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc85
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800 1000 900 1100
-30
-20
-50
-40
-10
-60
700 1200
V CC = 3.6V
V CC = 3.0V
V CC = 3.3V
LO SWITCH ISOLATION
vs. RF FREQUENCY
MAX19985A toc86
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
1300 1000 1200 1400 1100
45
35
40
50
30
900 1500
T C = -30°C
T C = +25°C
T C = +85°C
V CC = 3.3V
LO SWITCH ISOLATION
vs. RF FREQUENCY
M
AX19985A toc87
LO FREQUENCY (MHz)
LO SWITCH ISOLA
TION (dB)
1300 1000 1200 1400 1100
45
35
40
50
30
900 1500
P
LO
= -3dBm, 0dBm
P LO = +3dBm
V CC = 3.3V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc88
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
1300 1000 1200 1400 1100
45
35
40
50
30
900 1500
V CC = 3.0V, 3.3V, 3.6V
Typical Operating Characteristics (continued)
( Typical Application Circuit, V CC = +3.3V, P LO = 0dBm, P RF = -5dBm, LO is high-side injected for a 200MHz IF, T C =+25°C, unless
otherwise noted.)