Rainbow Electronics TSM15N15 - Manual

TSM15N15
150V N-Channel Power MOSFET
1/4 Version: A12
TO-252
(DPAK)
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(m Ω ) I
D
(A)
150 75 @ V
GS
=10V 12
Features
● Advanced Trench Technology
● Low R
DS(ON)
75m Ω (Max.)
● Low gate charge typical @ 20.9nC (Typ.)
● Low Crss typical @ 58pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No. Package Packing
TSM15N15CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
150 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current
T
C
=25°C
I
D
12
A
T
C
=70°C 9
T
A
=25°C 4
T
A
=70°C 3
Drain Current-Pulsed Note 1 I
DM
30 A
Avalanche Current, L=0.1mH I
AS
, I
AR
8.2 A
Avalanche Energy, L=0.1mH E
AS
, E
AR
100 mJ
Maximum Power Dissipation
T
C
=25°C
P
D
15.6
W
T
C
=70°C 10
T
A
=25°C 2
T
A
=70°C 1.3
Storage Temperature Range T
STG
-55 to +150 °C
Operating Junction Temperature Range T
J
-55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case R Ө
JC
8
o
C/W
Thermal Resistance - Junction to Ambient R Ө
JA
62
o
C/W
Pin Definition:
1. Gate
2. Drain
3. Source