Rainbow Electronics TSM19N20 User Manual
Tsm19n20, 200v n-channel power mosfet
TSM19N20
200V N-Channel Power MOSFET
1/4
Version: A12
TO-252
(DPAK)
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(m
Ω
)
I
D
(A)
200
92 @ V
GS
=10V
18
Features
●
Advanced Trench Technology
●
Low R
DS(ON)
92m
Ω
(Max.)
●
Low gate charge typical @ 55nC (Typ.)
●
Low Crss typical @ 73pF (Typ.)
Block Diagram
N-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM19N20CP ROG
TO-252
2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
200
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current @ T
C
=25°C
I
D
18
A
Drain Current Pulsed (Note 1)
I
DM
72
A
Avalanche Current
I
AS
8
A
Avalanche Energy, L=10mH
E
AS
320
mJ
Maximum Power Dissipation @ T
C
=25°C
P
D
48
W
Storage Temperature Range
T
STG
-55 to +150
°C
Operating Junction Temperature Range
T
J
-55 to +150
°C
* Limited by maximum junction temperature
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
R
Ө
JC
2.6
o
C/W
Thermal Resistance - Junction to Ambient
R
Ө
JA
50
o
C/W
Notes: Surface mounted on FR4 board t
≤
10sec
Pin Definition:
1. Gate
2. Drain
3. Source