Rainbow Electronics TSM20N50 User Manual
Tsm20n50, 500v n-channel power mosfet

TSM20N50
500V N-Channel Power MOSFET
1/10
Version: A12
TO-220
ITO-220
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(
Ω
)
I
D
(A)
500
0.3 @ V
GS
=10V
18
General Description
The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.
Features
●
Low R
DS(ON)
0.3
Ω
(Max.)
●
Low gate charge typical @ 54nC (Typ.)
●
Improve dv/dt capability
Block Diagram
N-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM20N50CZ C0
TO-220
50pcs / Tube
TSM20N50CI C0
ITO-220
50pcs / Tube
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
500
V
Gate-Source Voltage
V
GS
±30
V
Continuous Drain Current(T
C
=25
)
℃
I
D
18
A
Pulsed Drain Current *
I
DM
72
A
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Single Pulse Avalanche Energy (Note 2)
E
AS
954
mJ
Avalanche Current (Repetitive) (Note 1)
I
AR
18
A
Repetitive Avalanche Energy (Note 1)
E
AR
29
mJ
Operating Junction Temperature
T
J
150
ºC
Storage Temperature Range
T
STG
-55 to +150
o
C
* Limited by maximum junction temperature
Pin Definition:
1. Gate
2. Drain
3. Source