Typical operating characteristics (continued) – Rainbow Electronics MAX19985A User Manual
Page 10

MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
10
______________________________________________________________________________________
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc28
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-60
-50
-40
-30
-20
-70
700
1200
T
C
= -30
°C
T
C
= +85
°C
T
C
= +25
°C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc29
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-60
-50
-40
-30
-20
-70
700
1200
P
LO
= -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc30
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-60
-50
-40
-30
-20
-70
700
1200
V
CC
= 4.75V, 5.0V, 5.25V
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc31
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-50
-40
-30
-20
-10
-60
700
1200
T
C
= -30
°C, +25°C, +85°C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc32
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-50
-40
-30
-20
-10
-60
700
1200
P
LO
= -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19985A toc33
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
800
900
1100
1000
-50
-40
-30
-20
-10
-60
700
1200
V
CC
= 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc34
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
1100
1300
45
40
35
50
30
900
1500
1000
1200
1400
T
C
= +85
°C
T
C
= -30
°C
T
C
= +25
°C
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc35
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
1100
1300
45
40
35
50
30
900
1500
1000
1200
1400
P
LO
= +3dBm
P
LO
= -3dBm, 0dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19985A toc36
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
1100
1300
45
40
35
50
30
900
1500
1000
1200
1400
V
CC
= 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
(
Typical Application Circuit, V
CC
= +5.0V, P
LO
= 0dBm, P
RF
= -5dBm, LO is high-side injected for a 200MHz IF, T
C
=+25°C, unless
otherwise noted.)