Rainbow Electronics TSM12N65 - Manual

TSM12N65
650V N-Channel Power MOSFET
1/8 Version: A10
ITO-220 PRODUCT SUMMARY
V
DS
(V) R
DS(on)
( Ω ) I
D
(A)
650 0.8 @ V
GS
=10V 6
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
Features
● Low R
DS(ON)
0.68 Ω (Typ.)
● Low gate charge typical @ 41nC (Typ.)
● Low Crss typical @ 14.6pF (Typ.)
● Fast Switching
Ordering Information
Part No. Package Packing
TSM12N65CI C0 ITO-220 50pcs / Tube
Absolute Maximum Rating (Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
650 V
Gate-Source Voltage V
GS
±30 V
Continuous Drain Current
Tc = 25ºC
I
D
12 A
Tc = 100ºC 4.5 A
Pulsed Drain Current * I
DM
48 A
Single Pulse Avalanche Energy (Note 2) E
AS
273 mJ
Avalanche Current (Repetitive) (Note 2 I
AS
12 A
Single Pulse Avalanche Energy (Note 1) E
AR
7.6 mJ
Avalanche Current (Repetitive) (Note 1) I
AR
12 A
Total Power Dissipation @ T
C
= 25
o
C P
TOT
45 W
Operating Junction Temperature T
J
150 ºC
Storage Temperature Range T
STG
-55 to +150
o
C
Note: Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case R Ө
JC
2.7
o
C/W
Thermal Resistance - Junction to Ambient R Ө
JA
62.5
o
C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Block Diagram
N-Channel MOSFET
Pin Definition:
1. Gate
2. Drain
3. Source