Rainbow Electronics MAX19995 - Manual (Page 11)

MAX19995
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
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LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc28
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-50
-60
-30
-40
-20
-70
1400 2400
T C = -30 ° C, +25 ° C, +85 ° C
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc29
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-50
-60
-30
-40
-20
-70
1400 2400
P LO = -3dBm, 0dBm, +3dBm
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc30
LO FREQUENCY (MHz)
LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-50
-60
-30
-40
-20
-70
1400 2400
V CC = 4.75V, 5.0V, 5.25V
Typical Operating Characteristics (continued)
( Typical Application Circuit, optimized for the DCS/PCS band, R1 = R4 = 806
Ω, R2 = R5 = 2.32kΩ, V
CC = +5.0V, P LO = 0dBm,
P RF = -5dBm, LO is low-side injected for a 190MHz IF, T C = +25°C, unless otherwise noted.)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc31
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-40
-50
-20
-30
-10
-60
1400 2400
T C = +85 ° C
T C = -30 ° C
T
C
= +25 ° C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc32
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-40
-50
-20
-30
-10
-60
1400 2400
P LO = -3dBm, 0dBm, +3dBm
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19995 toc33
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT (dBm)
2200 1800 2000 1600
-40
-50
-20
-30
-10
-60
1400 2400
V CC = 4.75V, 5.0V, 5.25V
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc34
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 2150 1700 1850 1550
50
60
70
40
1400 2300
T C = +85 ° C
T C = -30 ° C
T C = +25 ° C
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc35
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 2150 1700 1850 1550
50
60
70
40
1400 2300
P LO = -3dBm, 0dBm, +3dBm
LO SWITCH ISOLATION
vs. LO FREQUENCY
MAX19995 toc36
LO FREQUENCY (MHz)
LO SWITCH ISOLATION (dB)
2000 2150 1700 1850 1550
50
60
70
40
1400 2300
V CC = 4.75V, 5.0V, 5.25V