Rainbow Electronics AT26DF081A - Manual (Page 39)

39
3600H–DFLASH–11/2012
AT26DF081A
16. Revision History
Revision Level – Release Date History
A – November 2005 Initial Release
B – March 2006
Added Global Protect and Global Unprotect Feature
- Made various minor text changes throughout document
- Added Global Protect/Unprotect section to document
- Changed Write Status Register section
Removed EPE bit from Status Register
C – April 2006 Changed Note 5 of 8S2 package drawing to generalize terminal plating comment
D – May 2006
Removed “Preliminary” designation.
Changed page and byte program specifications in Section 12.5
- Increased typical page program time from 1.5 ms to 3.0 ms
- Increased maximum page program time from 3.0 ms to 5.0 ms
- Increased typical byte program time from 6 µs to 12 µs
Added footnote (1) to t
CHPE
parameter in Section 12.5
E – January 2007
Added EPE bit description to the Read Status Register section.
Reduced typical read currents in Section 12.3 .
Improved program and erase times in Section 12.5 .
- Reduced typical page program time from 3.0 ms to 1.2 ms
- Reduced typical byte program time from 12 µs to 7 µs
- Reduced 32KB typical block erase time from 350 ms to 250 ms
- Reduced 64KB typical block erase time from 700 ms to 400 ms
- Reduced typical Chip Erase time from 10 sec to 6 sec
F – March 2007 Corrected 8S1 package drawing heading from EIAJ SOIC to JEDEC SOIC.
G – June 2009
Updated to new template.
Corrected errors in datasheet missed when “Preliminary” designation was removed.
- Changed Deep Power-Down Current typical value from 10 µa to 25 µa
- Changed Deep Power-Down Current maximum value from 15 µa to 35 µa
H – November 2012 Update to Adesto