C&H Technology EMF050J60U - Manual (Page 8)

VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11 7 Document Number: 93494
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Fig. 7 - Q1 - Q4 IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V, R
g
= 22 
Fig. 8 - Typical Q1 - Q4 IGBT Zero Gate Voltage Collector Current
Fig. 9 - Typical D5 - D6 Antiparallel Diode Forward Characteristics
Fig. 10 - Maximum DC D5 - D6 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
Fig. 11 - Typical Q1 - Q4 IGBT Energy Loss vs. I
C
(with Freewheeling D1 - D2 Clamping Diode)
V
CC
= 400 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
Fig. 12 - Typical Q1 - Q4 IGBT Switching Time vs. I
C
(with Freewheeling D1 - D2 Clamping Diode)
T
J
= 125 °C, V
CC
= 400 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
I C
(A)
V
CE
(V)
1 10 100 1000
0.01
0.1
1
93494_07
1000
10
100
I CE
S
(mA)
V
CES
(V)
100 600 200 300 400 500
0.0001
93494_08
1
0.1
0.01
0.001
125 °C
25 °C
I F
(A)
V
FM
(V)
0 3.0 0.5 1.0 1.5 2.0 2.5
0
93494_09
100
40
30
80
20
60
90
70
10
50
T
J
= 25 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
25 15 10 5 35 30 20 40 45 50 0
100
160
0
40
60
140
80
120
20
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DC
Ener
g
y (mJ)
I
C
(A)
10 20 50 70 30 60 80 40 90
0
93494_11
1.8
0.6
1.2
1.0
0.8
1.4
1.6
0.4
0.2 E
on
E
off
S
witchin
g
Time (ns)
I
C
(A)
10 20 30 80 60 40 50 70 90
10
93494_12
1000
100
t
d(off)
t
d(on)
t
f
t
r