Vishay semiconductors, Electrical specifications (t – C&H Technology EMF050J60U User Manual
Page 4
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
3
Document Number: 93494
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Q2 - Q3 IGBT
Collector to emitter breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 500 μA
900
-
-
V
Temperature coefficient of breakdown
voltage
BV
CES
/
T
J
V
GE
= 0 V, I
C
= 500 μA (25 °C to 125 °C)
-
- 8.5
-
V/°C
Collector to emitter voltage
V
CE(ON)
V
GE
= 15 V, I
C
= 27 A
-
2.45
2.8
V
V
GE
= 15 V, I
C
= 50 A
-
2.73
3.2
V
GE
= 15 V, I
C
= 27 A, T
J
= 125 °C
-
2
2.35
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C
-
2.43
2.9
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
2.8
4.5
6.3
Temperature coefficient of threshold
voltage
V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
-
- 11.7
-
mV/°C
Forward transconductance
g
fe
V
CE
= 20 V, I
C
= 50 A
-
68
-
s
Transfer characteristics
V
GE
V
CE
= 20 V, I
C
= 50 A
-
6.9
-
V
Zero gate voltage collector current
I
CES
V
GE
= 0 V, V
CE
= 900 V
-
0.006
0.38
mA
V
GE
= 0 V, V
CE
= 900 V, T
J
= 125 °C
-
1.4
3
Gate to emitter leakage current
I
GES
V
GE
= ± 20 V, V
CE
= 0 V
-
-
± 200
nA
D1 - D2 CLAMPING DIODE
Cathode to anode blocking voltage
V
BR
I
R
= 100 μA
600
-
-
V
Forward voltage drop
V
FM
I
F
= 30 A
-
1.84
2.12
I
F
= 30 A, T
J
= 125 °C
-
1.37
1.65
Reverse leakage current
I
RM
V
R
= 600 V
-
0.002
0.1
mA
V
R
= 600 V, T
J
= 125 °C
-
0.9
6
D3 - D4 AP DIODE
Forward voltage drop
V
FM
I
F
= 50 A
-
2.7
3.2
V
I
F
= 50 A T
J
= 125 °C
-
2.8
3.3
D5 - D6 AP DIODE
Forward voltage drop
V
FM
I
F
= 30 A
-
1.93
2.37
V
I
F
= 30 A T
J
= 125 °C
-
1.48
1.9
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS