Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 7
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
6
Document Number: 93494
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Fig. 1 - Typical Q1 - Q4 IGBT Output Characteristics
Fig. 2 - Typical Q1 - Q4 IGBT Output Characteristics
Fig. 3 - Maximum DC Q1 - Q4 IGBT Collector Current vs.
Case Temperature per Junction
Fig. 4 - Typical Q1 - Q4 IGBT Collector to Emitter Voltage vs.
Junction Temperature
Fig. 5 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 6 - Typical Q1 - Q4 IGBT Gate Threshold Voltage
I
C
(A)
V
CE
(V)
0
1.5
3.0
1.0
2.5
0.5
2.0
3.5
0
93494_01
100
20
50
80
40
70
90
10
30
60
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
1.5
2.5
3.0
3.5
0.5
1.0
2.0
4.0
0
93494_02
100
10
60
40
20
80
50
30
90
70
V
GE
= 8 V
V
GE
= 10 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
T
J
= 125 °C
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80
60
40
20
100
0
100
160
0
40
60
140
80
120
20
93494_03
DC
V
CE
(V)
T
J
(°C)
10
160
60
110
0.5
1.0
1.5
2.0
2.5
3.0
3.5
93494_04
4.0
100 A
50 A
27 A
V
GE
= 15 V
I
CE
(A)
V
GE
(V)
3
8
7
4
5
6
0
93494_05
100
30
40
10
50
60
20
80
90
70
T
J
= 25 °C
V
CE
= 20 V
T
J
= 125 °C
V
g
eth
(V)
I
C
(mA)
0
1.0
0.2
0.1
0.3
0.5
0.7
0.9
0.4
0.6
0.8
2.0
2.5
3.0
3.5
4.0
93494_06
4.5
T
J
= 25 °C
T
J
= 125 °C