C&H Technology EMF050J60U - Manual (Page 3)

VS-EMF050J60U
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11 2 Document Number: 93494
For technical questions within your region: [email protected] , [email protected] , [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1) V
CC
= 400 V, V
GE
= 15 V, L = 500 μH, R
g
= 22
, T
J
= 150 °C
(2) V
CC
= 720 V, V
GE
= 15 V, L = 500 μH, R
g
= 22
, T
J
= 150 °C
D1 - D2 CLAMPING DIODE
Repetitive peak reverse voltage V
RRM
600 V
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 270
A
Diode continuous forward current I
F
T
C
= 25 °C 68
T
C
= 80 °C 46
Power dissipation P
D
T
C
= 25 °C 150
W
T
C
= 80 °C 84
D3 - D4 AP DIODE
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 280
A
Diode continuous forward current I
F
T
C
= 25 °C 53
T
C
= 80 °C 36
Power dissipation P
D
T
C
= 25 °C 176
W
T
C
= 80 °C 99
D5 - D6 AP DIODE
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 220 A
Diode continuous forward current I
F
T
C
= 25 °C 46
A
T
C
= 80 °C 31
Power dissipation P
D
T
C
= 25 °C 96
W
T
C
= 80 °C 54
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 500 μA 600 - - V
Temperature coefficient of breakdown
voltage
BV
CES
/
T
J
V
GE
= 0 V, I
C
= 500 μA (25 °C to 125 °C) - 0.1 - V/°C
Collector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 27 A - 1.44 1.75
V
V
GE
= 15 V, I
C
= 50 A - 1.8 2.1
V
GE
= 15 V, I
C
= 27 A, T
J
= 125 °C - 1.7 2.05
V
GE
= 15 V, I
C
= 50 A, T
J
= 125 °C - 2.2 2.5
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 2.9 3.9 5.3
Temperature coefficient of threshold
voltage V
GE(th)
/
T
J
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C) - - 10 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 50 A - 95 - s
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 50 A - 5.9 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.003 0.1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.170 3
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - - ± 200 nA
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS