C&H Technology EMF050J60U - Manual (Page 5)

VS-EMF050J60U
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11 4 Document Number: 93494
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SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 - Q4 IGBT (WITH FREEWHEELING D1 - D2 CLAMPING DIODE)
Total gate charge (turn-on) Q
g I
C
= 70 A
V
CC
= 400 V
V
GE
= 15 V
- 480 720
nC Gate to ermitter charge (turn-on) Q
ge
- 82 164
Gate to collector charge (turn-on) Q
gc
- 160 260
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
R
g
= 4.7

L = 500 μH (1)
- 0.11 -
mJ Turn-off switching loss E
OFF
- 0.76 -
Total switching loss E
TOT
- 0.87 -
Turn-on delay time t
d(on)
- 182 -
ns
Rise time t
r
- 46 -
Turn-off delay time t
d(off)
- 207 -
Fall time t
f
- 92 -
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
R
g
= 4.7

L = 500 μH
T
J
= 125 °C (1)
- 0.25 -
mJ Turn-off switching loss E
OFF
- 0.88 -
Total switching loss E
TOT
- 1.13 -
Turn-on delay time t
d(on)
- 183 -
ns
Rise time t
r
- 47 -
Turn-off delay time t
d(off)
- 211 -
Fall time t
f
- 101 -
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 9500
pF Output capacitance C
oes
- 780
Reverse transfer capacitance C
res
- 116
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 150 A
V
CC
= 400 V, V
P
= 600 V
R
g
= 22 , V
GE
= 15 V to 0 V
Fullsquare
Q2 - Q3 IGBT (WITH FREEWHEELING D3 - D4 AP DIODE)
Total gate charge (turn-on) Q
g I
C
= 50 A
V
CC
= 400 V
V
GE
= 15 V
- 320 480
nC Gate to emitter charge (turn-on) Q
ge
- 38 58
Gate to collector charge (turn-on) Q
gc
- 106 160
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 720 V
V
GE
= 15 V
R
g
= 4.7

L = 500 μH (1)
- 0.56 -
mJ Turn-off switching loss E
OFF
- 0.68 -
Total switching loss E
TOT
- 1.24 -
Turn-on delay time t
d(on)
- 152 -
ns
Rise time t
r
- 48 -
Turn-off delay time t
d(off)
- 165 -
Fall time t
f
- 100 -
Turn-on switching loss E
ON
I
C
= 50 A
V
CC
= 720 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
T
J
= 125 °C (1)
- 0.95 -
mJ Turn-off switching loss E
OFF
- 2.18 -
Total switching loss E
TOT
- 3.13 -
Turn-on delay time t
d(on)
- 154 -
ns
Rise time t
r
- 52 -
Turn-off delay time t
d(off)
- 168 -
Fall time t
f
- 360 -
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 6600 -
pF Output capacitance C
oes
- 400 -
Reverse transfer capacitance C
res
- 90 -
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 150 A
V
CC
= 720 V, V
P
= 900 V
R
g
= 22
, V
GE
= 15 V to 0 V
Fullsquare