Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 13
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
12
Document Number: 93494
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Fig. 33 - Maximum Thermal Impedance Z
thJC
Characteristics (Q2 - Q3 IGBT)
Fig. 34 - Maximum Thermal Impedance Z
thJC
Characteristics (D3 - D4 Antiparallel Diode)
Fig. 35 - Typical D1 - D2 Clamping Diode Forward Characteristics
Fig. 36 - Maximum DC D1 - D2 Clamping Diode
Forward Current vs. Case Temperature per Junction
0.001
0.01
0.1
1
0.00001
93494_33
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.01
10
0.1
1
0.00001
93494_34
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
I
F
(A)
V
FM
(V)
0
1.5
1.0
2.5
0.5
2.0
3.0
0
93494_35
100
20
50
80
40
70
90
10
30
60
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
50
30
60
40
20
10
70
0
100
160
0
40
60
140
80
120
20
93494_36
DC