Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 11
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
10
Document Number: 93494
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Fig. 22 - Typical Q1 - Q4 IGBT Transfer Characteristics
Fig. 23 - Typical Q2 - Q3 IGBT Gate Threshold Voltage
Fig. 24 - Q2 - Q3 IGBT Reverse Bias SOA
T
J
= 150 °C, V
GE
= 15 V, R
g
= 22
Fig. 25 - Typical Q2 - Q3 IGBT Zero Gate Voltage Collector Current
Fig. 26 - Typical D3 - D4 Antiparallel Diode Forward Characteristics
Fig. 27 - Maximum DC D3 - D4 Antiparallel Diode
Forward Current vs. Case Temperature per Junction
I
CE
(A)
V
GE
(V)
4
9
8
5
6
7
0
93494_22
100
30
40
10
50
60
20
80
90
70
V
CE
= 20 V
T
J
= 25 °C
T
J
= 125 °C
V
g
eth
(V)
I
C
(mA)
0
1.0
0.2
0.1
0.3
0.5
0.7
0.9
0.4
0.6
0.8
1.5
2.5
2.0
3.0
3.5
4.0
93494_23
5.5
4.5
5.0
T
J
= 25 °C
T
J
= 125 °C
I
C
(A)
V
CE
(V)
1
10
100
1000
0.01
0.1
1
93494_24
1000
10
100
I
CE
S
(mA)
V
CES
(V)
100
900
200
300
400
500
600
700
800
0.0001
93494_25
10
1
0.1
0.01
0.001
125 °C
25 °C
I
F
(A)
V
FM
(V)
0
4.5
3.0
3.5
4.0
0.5
1.0
1.5
2.0
2.5
0
93494_26
100
40
30
80
20
60
90
70
10
50
T
J
= 25 °C
T
J
= 125 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
25
15
10
5
35
30
20
40 45
60
50 55
0
100
160
0
40
60
140
80
120
20
93494_27
DC