Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 10
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
9
Document Number: 93494
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Fig. 17 - Maximum Thermal Impedance Z
thJC
Characteristics (D5 - D6 Antiparallel Diode)
Fig. 18 - Typical Q2 - Q3 IGBT Output Characteristics
Fig. 19 - Typical Q2 - Q3 IGBT Output Characteristics
Fig. 20 - Maximum DC Q2 - Q3 IGBT Collector Current vs.
Case Temperature per Junction
Fig. 21 - Typical Q2 - Q3 IGBT Collector to Emitter Voltage vs.
Junction Temperature
0.001
0.01
10
0.1
1
0.00001
93494_17
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC
I
C
(A)
V
CE
(V)
0
1.5
3.0
1.0
2.5
0.5
2.0
3.5
0
93494_18
100
20
50
80
40
70
90
10
30
60
T
J
= 125 °C
T
J
= 150 °C
T
J
= 25 °C
V
GE
= 15 V
I
C
(A)
V
CE
(V)
0
1.5
2.5
3.0
3.5
0.5
1.0
2.0
4.0
0
93494_19
100
10
60
40
20
80
50
30
90
70
V
GE
= 9 V
V
GE
= 12 V
V
GE
= 15 V
V
GE
= 18 V
T
J
= 125 °C
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
80
60
40
20
100
0
100
160
0
40
60
140
80
120
20
93494_20
DC
V
CE
(V)
T
J
(°C)
10
160
60
110
1.0
1.5
2.0
2.5
3.0
3.5
93494_21
4.0
100 A
50 A
27 A
V
GE
= 15 V