Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 14
VS-EMF050J60U
www.vishay.com
Vishay Semiconductors
Revision: 09-Dec-11
13
Document Number: 93494
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 37 - Typical D1 - D2 Clamping Diode
Reverse Leakage Current
Fig. 38 - Typical D1 - D2 Clamping Diode Reverse
Recovery Time vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 39 - Typical D1 - D2 Clamping Diode Reverse
Recovery Current vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 40 - Typical D1 - D2 Clamping Diode Reverse
Recovery Charge vs. dI
F
/dt
V
R
= 200 V, I
F
= 30 A
Fig. 41 - Maximum Thermal Impedance Z
thJC
Characteristics (D1 - D2 Clamping Diode)
I
R
(mA)
V
R
(V)
100
200
300
400
500
600
0.0001
0.001
0.01
0.1
1
10
93494_37
125 °C
25 °C
t
rr
(ns)
dI
F
/dt (A/μs)
100
200
300
400
93494_38
500
40
160
80
140
120
60
100
125 °C
25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
200
300
400
93494_39
500
1
21
7
13
3
9
17
15
11
19
5
125 °C
25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
200
300
400
93494_40
500
0
1000
200
400
600
300
500
700
900
800
100
125 °C
25 °C
0.001
0.01
10
0.1
1
0.00001
93494_41
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impe
d
ance
Junction to Case (°C/W)
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
DC