Vishay semiconductors – C&H Technology EMF050J60U User Manual
Page 12
VS-EMF050J60U
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Vishay Semiconductors
Revision: 09-Dec-11
11
Document Number: 93494
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Fig. 28 - Typical Q2 - Q3 IGBT Energy Loss vs. I
C
(with Freewheeling D2 - D3 AP Diode)
V
CC
= 720 V, R
g
= 4.7
, V
GE
= 15 V, L = 500 μH
Fig. 29 - Typical Q2 - Q3 IGBT Switching Time vs. I
C
(with Freewheeling D2 - D3 AP Diode)
T
J
= 125 °C, V
CC
= 720 V, R
g
= 4.7
, V
GE
= 15 V, L = 500 μH
Fig. 30 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Time vs. dI
F
/dt
V
R
= 400 V, I
F
= 50 A
Fig. 31 - Typical D3 - D4 Antiparallel Diode Reverse
Recovery Current vs. dI
F
/dt
V
R
= 400 V, I
F
= 50 A
Fig. 32 - Typical D3 - D4 Antiparallel Diode Reverse Recovery Charge vs. dI
F
/dt
V
R
= 400 V, I
F
= 50 A
Ener
g
y (mJ)
I
C
(A)
10
20
50
70
30
60
80
40
90
0.2
93494_28
4.2
1.4
2.6
2.2
1.8
3.0
3.4
3.8
1.0
0.6
E
on
E
off
S
witchin
g
Time (ns)
I
C
(A)
10
20
30
80
60
40
50
70
90
10
93494_29
1000
100
t
d(off)
t
d(on)
t
f
t
r
t
rr
(ns)
dI
F
/dt (A/μs)
100
200
300
400
93494_30
500
100
280
140
200
240
180
120
160
220
260
125 °C
25 °C
I
rr
(A)
dI
F
/dt (A/μs)
100
200
300
400
93494_31
500
4
32
16
28
8
20
24
12
125 °C
25 °C
Q
rr
(nC)
dI
F
/dt (A/μs)
100
200
300
400
93494_32
500
500
2500
1000
1500
2000
1250
1750
2250
750
125 °C
25 °C