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Cypress CY7C1350G User Manual

Features, Functional description, Logic block diagram

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4-Mbit (128K x 36) Pipelined SRAM

with NoBL™ Architecture

CY7C1350G

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05524 Rev. *F

Revised July 5, 2006

Features

• Pin compatible and functionally equivalent to ZBT™

devices

• Internally self-timed output buffer control to eliminate

the need to use OE

• Byte Write capability

• 128K x 36 common I/O architecture

• 3.3V power supply (V

DD

)

• 2.5V/3.3V I/O power supply (V

DDQ

)

• Fast clock-to-output times

— 2.6 ns (for 250-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed writes

• Asynchronous output enable (OE)

• Available in lead-free 100-Pin TQFP package, lead-free

and non-lead-free 119-Ball BGA package

• Burst Capability—linear or interleaved burst order

• “ZZ” Sleep mode option

Functional Description

[1]

The CY7C1350G is a 3.3V, 128K x 36 synchronous-pipelined
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations without the insertion of
wait states. The CY7C1350G is equipped with the advanced
No Bus Latency™ (NoBL™) logic required to enable consec-
utive Read/Write operations with data being transferred on
every clock cycle. This feature dramatically improves the
throughput of the SRAM, especially in systems that require
frequent Write/Read transitions.

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. The
clock input is qualified by the Clock Enable (CEN) signal,
which, when deasserted, suspends operation and extends the
previous clock cycle. Maximum access delay from the clock
rise is 2.6 ns (250-MHz device)

Write operations are controlled by the four Byte Write Select
(BW

[A:D]

) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

A0, A1, A

C

MODE

BW

A

BW

B

WE

CE1
CE2
CE3

OE

READ LOGIC

DQs
DQP

A

DQP

B

DQP

C

DQP

D

D

A

T

A

S

T

E

E

R

I

N

G

O

U

T

P

U

T

B

U

F

F

E

R

S

MEMORY

ARRAY

E

E

INPUT

REGISTER 0

ADDRESS

REGISTER 0

WRITE ADDRESS

REGISTER 1

WRITE ADDRESS

REGISTER 2

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

BURST

LOGIC

A0'

A1'

D1
D0

Q1
Q0

A0

A1

C

ADV/LD

ADV/LD

E

INPUT

REGISTER 1

S

E

N

S

E

A

M

P

S

E

CLK

CEN

WRITE

DRIVERS

BW

C

BW

D

ZZ

SLEEP

CONTROL

O

U

T

P

U

T

R

E

G

I

S

T

E

R

S

Logic Block Diagram

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