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Cypress CY7C1231H User Manual

Features, Functional description, Logic block diagram

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2-Mbit (128K x 18) Flow-Through SRAM

with NoBL™ Architecture

CY7C1231H

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 001-00207 Rev. *B

Revised April 26, 2006

Features

• Can support up to 133-MHz bus operations with zero

wait states

— Data is transferred on every clock

• Pin compatible and functionally equivalent to ZBT™

devices

• Internally self-timed output buffer control to eliminate

the need to use OE

• Registered inputs for flow-through operation

• Byte Write capability

• 128K x 18 common I/O architecture

• 3.3V core power supply

• 3.3V/2.5V I/O operation

• Fast clock-to-output times

— 6.5 ns (133-MHz device)

• Clock Enable (CEN) pin to suspend operation

• Synchronous self-timed write

• Asynchronous Output Enable

• Offered in JEDEC-standard lead-free 100-pin TQFP

package

• Burst Capability—linear or interleaved burst order

• Low standby power

Functional Description

[1]

The CY7C1231H is a 3.3V/2.5V, 128K x 18 Synchronous
Flow-through Burst SRAM designed specifically to support
unlimited true back-to-back Read/Write operations without the
insertion of wait states. The CY7C1231H is equipped with the
advanced No Bus Latency™ (NoBL™) logic required to
enable consecutive Read/Write operations with data being
transferred on every clock cycle. This feature dramatically
improves the throughput of data through the SRAM, especially
in systems that require frequent Write-Read transitions.

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).

Write operations are controlled by the two Byte Write Select
(BW

[A:B]

) and a Write Enable (WE) input. All writes are

conducted with on-chip synchronous self-timed write circuitry.

Three synchronous Chip Enables (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. In order to avoid bus
contention, the output drivers are synchronously tri-stated
during the data portion of a write sequence.

Note:

1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.

C

MODE

BW

A

BW

B

WE

CE

1

CE

2

CE

3

OE

READ LOGIC

DQs
DQP

A

DQP

B

MEMORY

ARRAY

E

INPUT

REGISTER

ADDRESS
REGISTER

WRITE REGISTRY

AND DATA COHERENCY

CONTROL LOGIC

BURST

LOGIC

A0'

A1'

D1
D0

Q1
Q0

A0

A1

ADV/LD

CE

ADV/LD

C

CLK

CEN

WRITE

DRIVERS

D
A

T

A

S
T
E
E

R

I

N
G

S
E

N

S
E

A

M

P
S

WRITE ADDRESS

REGISTER

A0, A1, A

O
U

T
P

U

T

B

U

F
F
E

R

S

E

ZZ

SLEEP

CONTROL

Logic Block Diagram

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