Rainbow Electronics AT29BV040A - Manual

1
Features
• Single Supply Voltage, Range 2.7V to 3.6V
• Single Supply for Read and Write
• Software Protected Programming
• Fast Read Access Time – 200 ns
• Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
• Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 2048 Sectors (256 Bytes/Sector)
– Internal Address and Data Latches for 256 Bytes
• Two 16K Bytes Boot Blocks with Lockout
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Minimum Endurance 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29BV040A is a 3-volt-only in-system Flash Programmable and Erasable Read
Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,
the device offers access times to 200 ns, and a low 54 mW power dissipation. When
the device is deselected, the CMOS standby current is less than 40
µA. The device
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
™
Flash Memory
AT29BV040A
Rev. 0383F–FLASH–05/02
TSOP Top View
Type 1
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
CBGA
Top View
A
B
C
D
E
F
G
H
1 2 3 4
A7
A6
A5
A4
A3
A2
A1
A0
A18
A16
A15
A12
I/O0
I/O1
I/O2
GND
A14
A17
WE
VCC
I/O3
I/O4
I/O5
I/O6
A13
A8
A9
A11
I/O7
CE
A10
OE