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Voltage measurements – Rainbow Electronics DS2778 User Manual

Page 13

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DS2775/DS2776/DS2777/DS2778

2-Cell, Stand-Alone, Li+ Fuel-Gauge IC with

Protector and Optional SHA-1 Authentication

______________________________________________________________________________________

13

Undervoltage (UV)

If the average of the voltages on (V

IN2

- V

IN1

) or

(V

IN1

- V

SS

) drops below the undervoltage threshold,

V

UV

, for a period longer than undervoltage delay, t

UVD

,

the DS2775–DS2778 shut off the charge and discharge
FETs and set the UV flag in the Protection register. If
UVEN is set, the DS2775–DS2778 also enter sleep
mode. When a charger is detected and V

PLS

> V

IN2

,

the DS2775–DS2778 provide a current-limited recovery
charge path (I

RC

) from PLS to V

DD

to gently charge

severely depleted cells. The recovery charge path is
enabled when 0

≤ [(V

IN2

- V

IN1

) and (V

IN1

- V

SS

)] <

V

CE

. The FETs remain off until (V

IN2

- V

IN1

) and

(V

IN1

- V

SS

) exceed V

UV

.

Overcurrent, Charge Direction (COC)

Charge current develops a negative voltage on V

SNS

with respect to V

SS

. If V

SNS

is less than the charge

overcurrent threshold, V

COC

, for a period longer than

overcurrent delay, t

OCD

, the DS2775–DS2778 shut off

both external FETs and set the COC flag in the
Protection register. The charge current path is not re-
established until the voltage on the PLS pin drops
below (V

DD

- V

TP

). The DS2775–DS2778 provide a test

current of value I

PPD

from PLS to V

SS

, pulling PLS

down, in order to detect the removal of the offending
charge current source.

Overcurrent, Discharge Direction (DOC)

Discharge current develops a positive voltage on V

SNS

with respect to V

SS

. If V

SNS

exceeds the discharge

overcurrent threshold, V

DOC

, for a period longer than

t

OCD

, the DS2775–DS2778 shut off the external dis-

charge FET and set the DOC flag in the Protection reg-
ister. The discharge current path is not reestablished

until the voltage on PLS rises above (V

DD

- V

TP

). The

DS2775–DS2778 provide a test current of value I

TST

from V

DD

to PLS, pulling PLS up, in order to detect the

removal of the offending low-impedance load.

Short Circuit (SC)

If V

SNS

exceeds short-circuit threshold, V

SC

, for a

period longer than short-circuit delay, t

SCD

, the

DS2775–DS2778 shut off the external discharge FET
and set the DOC flag in the Protection register. The
discharge current path is not reestablished until the
voltage on PLS rises above (V

DD

- V

TP

). The DS2775–

DS2778 provide a test current of value I

TST

from V

DD

to PLS, pulling PLS up, in order to detect the removal
of the short circuit.

All the protection conditions described are logic
ANDed to affect the CC and DC outputs.

CC = (overvoltage) AND (undervoltage) AND

(overcurrent, charge direction) AND (Protection register

bit CE = 0)

DC = (undervoltage) AND (overcurrent, either direction)

AND (short circuit) AND (Protection register bit

DE = 0)

Voltage Measurements

Cell voltages are measured every 440ms. The lowest
potential cell, V

IN1

, is measured with respect to V

SS

.

The highest potential cell, V

IN2

, is measured with

respect to V

IN1

. Battery voltages are measured with a

range of -5V to +4.9951V and a resolution of 4.8828mV
and placed in the Result register in two’s complement
form. Voltages above the maximum register value are
reported as 7FE0h.

MSB - ADDRESS 0Ch, V

IN1

- V

SS

LSB - ADDRESS 0Dh, V

IN1

- V

SS

MSB - ADDRESS 1Ch, V

IN2

- V

IN1

LSB - ADDRESS 1Dh, V

IN2

- V

IN1

S 2

9

2

8

2

7

2

6

2

5

2

4

2

3

2

2

2

1

2

0

X X X X X

MSb

LSb

MSb

LSb

“S”: SIGN BITS(S), “X”: RESERVED

UNITS: 4.883mV

Figure 4. Voltage Register Format