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Dc programming characteristics, Ac programming/erase characteristics – Rainbow Electronics W27E520 User Manual

Page 7

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Advance Information W27E520

Publication Release Date: 4/26/2000

- 7 -

Revision A1

DC PROGRAMMING CHARACTERISTICS

(V

DD

= 6.5V

±

0.25V, T

A

= 25

°

C

±

5

°

C)

PARAMETER

SYM.

CONDITIONS

LIMITS

UNIT

MIN.

TYP.

MAX.

Input Load Current

I

LI

V

IN

= V

IL

or V

IH

-10

-

10

µ

A

V

DD

Program Current

I

CP

ALE = V

IH

,

OE

/V

PP

= V

PP

-

-

30

mA

V

PP

Program Current

I

PP

ALE = V

IH

,

OE

/V

PP

= V

PP

-

-

30

mA

Input Low Voltage

V

IL

-

-0.3

-

0.8

V

Input High Voltage

V

IH

-

2.4

-

V

DD

+0.5

V

Output Low Voltage (Verify)

V

OL

I

OL

= 2.1 mA

-

-

0.45

V

Output High Voltage (Verify)

V

OH

I

OH

= -0.4 mA

2.4

-

-

V

A9 Silicon I.D. Voltage

V

HH

V

DD

= 5V

±

10%

11.5

12.0

12.5

V

V

PP

Program Voltage

V

PP

-

12.75

13.0

13.25

V

V

DD

Supply Voltage (Program)

V

DP

-

6.25

6.5

6.75

V

AC PROGRAMMING/ERASE CHARACTERISTICS

(V

DD

= 6.5V

±

0.25V, T

A

= 25

°

C

±

5

°

C)

PARAMETER

SYM.

LIMITS

UNIT

MIN.

TYP.

MAX.

OE

/V

PP

Pulse Rise Time

T

PRT

50

-

-

nS

Address Latch Enable Width

T

ALE

500

-

-

nS

ALE Program Pulse Width

T

PPW

47.5

50

52.5

µ

S

ALE Erase Pulse Width

T

EPW

95

100

105

mS

ALE Erase Pulse Width 1

T

EPW1

47.5

50

52.5

µ

S

ALE Erase Pulse Width 2

T

EPW2

95

100

105

mS

Latched Address Setup Time

T

LAS

100

-

-

nS

Latched Address Hold Time

T

LAH

100

-

-

nS

Address Setup Time

T

AS

2.0

-

-

µ

S

Address Hold Time

T

AH

0

-

-

µ

S

OE

/V

PP

Setup Time

T

OES

2.0

-

-

µ

S

OE

/V

PP

Hold Time

T

OEH

2.0

-

-

µ

S

Data Setup Time

T

DS

2.0

-

-

µ

S

Data Hold Time

T

DH

2.0

-

-

µ

S

Data Valid from

OE

/V

PP

Low during Erase Verify

T

EOE

-

-

150

nS

Data Valid from

OE

/V

PP

Low during Program Verify

T

POE

-

-

150

nS

OE

/V

PP

High to Output High Z

T

DFP

0

-

130

nS

OE

/V

PP

High Voltage Delay After ALE Low

T

VS

2.0

-

-

µ

S

OE

/V

PP

Recovery Time

T

VR

2.0

-

-

µ

S

Note: V

DD

must be applied simultaneously or before V

PP

and removed simultaneously or after V

PP

.