Dc programming characteristics, Ac programming/erase characteristics – Rainbow Electronics W27E520 User Manual
Page 7
Advance Information W27E520
Publication Release Date: 4/26/2000
- 7 -
Revision A1
DC PROGRAMMING CHARACTERISTICS
(V
DD
= 6.5V
±
0.25V, T
A
= 25
°
C
±
5
°
C)
PARAMETER
SYM.
CONDITIONS
LIMITS
UNIT
MIN.
TYP.
MAX.
Input Load Current
I
LI
V
IN
= V
IL
or V
IH
-10
-
10
µ
A
V
DD
Program Current
I
CP
ALE = V
IH
,
OE
/V
PP
= V
PP
-
-
30
mA
V
PP
Program Current
I
PP
ALE = V
IH
,
OE
/V
PP
= V
PP
-
-
30
mA
Input Low Voltage
V
IL
-
-0.3
-
0.8
V
Input High Voltage
V
IH
-
2.4
-
V
DD
+0.5
V
Output Low Voltage (Verify)
V
OL
I
OL
= 2.1 mA
-
-
0.45
V
Output High Voltage (Verify)
V
OH
I
OH
= -0.4 mA
2.4
-
-
V
A9 Silicon I.D. Voltage
V
HH
V
DD
= 5V
±
10%
11.5
12.0
12.5
V
V
PP
Program Voltage
V
PP
-
12.75
13.0
13.25
V
V
DD
Supply Voltage (Program)
V
DP
-
6.25
6.5
6.75
V
AC PROGRAMMING/ERASE CHARACTERISTICS
(V
DD
= 6.5V
±
0.25V, T
A
= 25
°
C
±
5
°
C)
PARAMETER
SYM.
LIMITS
UNIT
MIN.
TYP.
MAX.
OE
/V
PP
Pulse Rise Time
T
PRT
50
-
-
nS
Address Latch Enable Width
T
ALE
500
-
-
nS
ALE Program Pulse Width
T
PPW
47.5
50
52.5
µ
S
ALE Erase Pulse Width
T
EPW
95
100
105
mS
ALE Erase Pulse Width 1
T
EPW1
47.5
50
52.5
µ
S
ALE Erase Pulse Width 2
T
EPW2
95
100
105
mS
Latched Address Setup Time
T
LAS
100
-
-
nS
Latched Address Hold Time
T
LAH
100
-
-
nS
Address Setup Time
T
AS
2.0
-
-
µ
S
Address Hold Time
T
AH
0
-
-
µ
S
OE
/V
PP
Setup Time
T
OES
2.0
-
-
µ
S
OE
/V
PP
Hold Time
T
OEH
2.0
-
-
µ
S
Data Setup Time
T
DS
2.0
-
-
µ
S
Data Hold Time
T
DH
2.0
-
-
µ
S
Data Valid from
OE
/V
PP
Low during Erase Verify
T
EOE
-
-
150
nS
Data Valid from
OE
/V
PP
Low during Program Verify
T
POE
-
-
150
nS
OE
/V
PP
High to Output High Z
T
DFP
0
-
130
nS
OE
/V
PP
High Voltage Delay After ALE Low
T
VS
2.0
-
-
µ
S
OE
/V
PP
Recovery Time
T
VR
2.0
-
-
µ
S
Note: V
DD
must be applied simultaneously or before V
PP
and removed simultaneously or after V
PP
.