Electrical characteristics (continued) – Rainbow Electronics MAX17000 User Manual
Page 4
MAX17000
Complete DDR2 and DDR3 Memory
Power-Management Solution
4
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ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= 12V, V
CC
= V
DD
= V
SHDN
= V
REFIN
= 5V, V
CSL
= 1.8V, STDBY = SKIP = AGND, T
A
= 0°C to +85°C, unless otherwise noted.
Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
REFERENCE BUFFER (VTTR)
I
VTT
= ±1mA
-10
+10
VTTR Output Accuracy (Adj)
REFIN to VTTR
I
VTT
= ±3mA
-20
+20
I
VTT
= ±1mA
-10
+10
VTTR Output Accuracy (Preset)
V
CSL
/2 to VTTR
I
VTT
= ±3mA
-20
+20
mV
VTTR Maximum
Recommended Current
Source/sink
5 mA
FAULT DETECTION (SMPS)
SMPS OVP and PGOOD1
Upper Trip Threshold
12 15 18 %
SMPS OVP and PGOOD1
Upper Trip Threshold
Fault-Propagation Delay
t
OVP
FB forced 25mV above trip threshold
10
μs
SMPS Output Undervoltage
Fault-Propagation Delay
t
UVP
200 μs
SMPS PGOOD1 Lower Trip
Threshold
Measured at FB, hysteresis = 25mV
-12
-15
-18
%
PGOOD1 Lower Trip Threshold
Propagation Delay
t
PGOOD1
FB forced 50mV below PGOOD1 trip
threshold
10 μs
PGOOD1 Output Low Voltage
I
SINK
= 3mA
0.4
V
PGOOD1 Leakage Current
I
PGOOD1
FB = 1V (PGOOD1 high impedance),
PGOOD1 forced to 5V, T
A
= +25°C
1 μA
TON POR Threshold
V
POR(IN)
Rising edge, PWM disabled below this level;
hysteresis = 200mV
3.0
V
FAULT DETECTION (VTT)
PGOOD2 Upper Trip Threshold
Hysteresis = 25mV
8
10
13
%
PGOOD2 Lower Trip Threshold
Hysteresis = 25mV
-13
-10
-8
%
PGOOD2 Propagation Delay
t
PGOOD2
VTTS forced 50mV beyond PGOOD2
trip threshold
10 μs
PGOOD2 Fault Latch Delay
VTTS forced 50mV beyond PGOOD2
trip threshold
5 ms
PGOOD2 Output Low Voltage
I
SINK
= 3mA
0.4
V
PGOOD2 Leakage Current
I
PGOOD2
VTTS = V
REFIN
(PGOOD2 high impedance),
PGOOD2 forced to 5V, T
A
= +25°C
1 μA
FAULT DETECTION
Thermal-Shutdown Threshold
T
SHDN
Hysteresis = 15
°C
160
°C
V
CC
Undervoltage Lockout
Threshold
V
UVLO(VCC)
Rising edge, IC disabled below this level
hysteresis = 200mV
3.8 4.1 4.4 V
CSL Discharge MOSFET
OVP = V
CC
16