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Pin definitions – Cypress CY7C1345G User Manual

Page 5

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CY7C1345G

Document Number: 38-05517 Rev. *E

Page 5 of 20

Pin Definitions

Name

IO

Description

A0, A1, A

Input

Synchronous

Address Inputs Used to Select One of the 128K Address Locations. Sampled at the rising edge

of the CLK if ADSP or ADSC is active LOW, and CE

1

,

CE

2

, and

CE

3

are sampled active. A

[1:0]

feed

the two-bit counter.

BW

A,

BW

B

BW

C

, BW

D

Input

Synchronous

Byte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes to the SRAM.

Sampled on the rising edge of CLK.

GW

Input

Synchronous

Global Write Enable Input, Active LOW. When asserted LOW on the rising edge of CLK, a global

write is conducted (ALL bytes are written, regardless of the values on BW

[A:D]

and BWE).

BWE

Input

Synchronous

Byte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal is asserted

LOW to conduct a byte write.

CLK

Input Clock

Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst

counter when ADV is asserted LOW, during a burst operation.

CE

1

Input

Synchronous

Chip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with

CE

2

and CE

3

to select or deselect the device. ADSP is ignored if CE

1

is HIGH. CE

1

is sampled only

when a new external address is loaded.

CE

2

Input

Synchronous

Chip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with

CE

1

and CE

3

to select or deselect the device. CE

2

is sampled only when a new external address is

loaded.

CE

3

Input

Synchronous

Chip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with

CE

1

and CE

2

to select or deselect the device. CE

3

is sampled only when a new external address is

loaded.

OE

Input

Asynchronous

Output Enable, asynchronous Input, Active LOW. Controls the direction of the IO pins. When

LOW, the IO pins act as outputs. When deasserted HIGH, IO pins are tri-stated and act as input data

pins. OE is masked during the first clock of a read cycle when emerging from a deselected state.

ADV

Input

Synchronous

Advance Input Signal, Sampled on the Rising Edge of CLK. When asserted, it automatically incre-

ments the address in a burst cycle.

ADSP

Input

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, Active LOW. When

asserted LOW, addresses presented to the device are captured in the address registers. A

[1:0]

are

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-

nized. ASDP is ignored when CE

1

is deasserted HIGH.

ADSC

Input

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, Active LOW. When

asserted LOW, addresses presented to the device are captured in the address registers. A

[1:0]

are

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-

nized.

ZZ

Input

Asynchronous

ZZ sleep Input, Active HIGH. When asserted HIGH places the device in a non-time critical sleep

condition with data integrity preserved. During normal operation, this pin is low or left floating. ZZ pin

has an internal pull down.

DQs

DQP

A,

DQP

B

DQP

C,

DQP

D

IO

Synchronous

Bidirectional Data IO lines. As inputs, they feed into an on-chip data register that is triggered by

the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified

by the addresses presented during the previous clock rise of the read cycle. The direction of the pins

is controlled by OE. When OE is asserted LOW, the pins act as outputs. When HIGH, DQs and

DQP

[A:D]

are placed in a tri-state condition.

V

DD

Power Supply Power supply inputs to the core of the device.

V

SS

Ground

Ground for the core of the device.

V

DDQ

IO Power

Supply

Power supply for the IO circuitry.

V

SSQ

IO Ground

Ground for the IO circuitry.