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Maximum ratings, Operating range, Electrical characteristics – Cypress CY7C1360C User Manual

Page 18

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CY7C1360C
CY7C1362C

Document #: 38-05540 Rev. *H

Page 18 of 31

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with
Power Applied............................................. –55°C to +125°C

Supply Voltage on V

DD

Relative to GND........ –0.5V to +4.6V

Supply Voltage on V

DDQ

Relative to GND ...... –0.5V to +V

DD

DC Voltage Applied to Outputs
in Tri-State..........................................–0.5V to VDDQ + 0.5V

DC Input Voltage .................................. –0.5V to VDD + 0.5V

Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... > 200 mA

Operating Range

Range

Ambient

Temperature

V

DD

V

DDQ

Commercial

0°C to +70°C

3.3V

5%/+10%

2.5V – 5% to

V

DD

Industrial

–40°C to +85°C

Electrical Characteristics

Over the Operating Range

[14, 15]

Parameter

Description

Test Conditions

Min.

Max.

Unit

V

DD

Power Supply Voltage

3.135

3.6

V

V

DDQ

I/O Supply Voltage

for 3.3V I/O

3.135

V

DD

V

for 2.5V I/O

2.375

2.625

V

V

OH

Output HIGH Voltage

for 3.3V I/O, I

OH

= –4.0 mA

2.4

V

for 2.5V I/O, I

OH

= –1.0 mA

2.0

V

V

OL

Output LOW Voltage

for 3.3V I/O, I

OL

= 8.0 mA

0.4

V

for 2.5V I/O, I

OL

= 1.0 mA

0.4

V

V

IH

Input HIGH Voltage

[14]

for 3.3V I/O

2.0

V

DD

+ 0.3V

V

for 2.5V I/O

1.7

V

DD

+ 0.3V

V

V

IL

Input LOW Voltage

[14]

for 3.3V I/O

–0.3

0.8

V

for 2.5V I/O

–0.3

0.7

V

I

X

Input Leakage Current
except ZZ and MODE

GND

≤ V

I

≤ V

DDQ

–5

5

µA

Input Current of MODE

Input = V

SS

–30

µA

Input = V

DD

5

µA

Input Current of ZZ

Input = V

SS

–5

µA

Input = V

DD

30

µA

I

OZ

Output Leakage Current

GND

≤ V

I

≤ V

DDQ,

Output Disabled

–5

5

µA

I

DD

V

DD

Operating Supply

Current

V

DD

= Max., I

OUT

= 0 mA,

f = f

MAX

= 1/t

CYC

4-ns cycle, 250 MHz

250

mA

5-ns cycle, 200 MHz

220

mA

6-ns cycle, 166 MHz

180

mA

I

SB1

Automatic CE
Power-down
Current—TTL Inputs

V

DD

= Max, Device Deselected,

V

IN

≥ V

IH

or V

IN

≤ V

IL

f = f

MAX

= 1/t

CYC

4-ns cycle, 250 MHz

130

mA

5-ns cycle, 200 MHz

120

mA

6-ns cycle, 166 MHz

110

mA

I

SB2

Automatic CE
Power-down
Current—CMOS Inputs

V

DD

= Max, Device Deselected,

V

IN

≤ 0.3V or V

IN

> V

DDQ

– 0.3V,

f = 0

All speeds

40

mA

I

SB3

Automatic CE
Power-down
Current—CMOS Inputs

V

DD

= Max, Device Deselected, or

V

IN

≤ 0.3V or V

IN

> V

DDQ

– 0.3V

f = f

MAX

= 1/t

CYC

4-ns cycle, 250 MHz

120

mA

5-ns cycle, 200 MHz

110

mA

6-ns cycle, 166 MHz

100

mA

I

SB4

Automatic CE
Power-down
Current—TTL Inputs

V

DD

= Max, Device Deselected,

V

IN

≥ V

IH

or V

IN

≤ V

IL

, f = 0

All Speeds

40

mA

Notes:

14. Overshoot: V

IH

(AC) < V

DD

+1.5V (Pulse width less than t

CYC

/2), undershoot: V

IL

(AC) > –2V (Pulse width less than t

CYC

/2).

15. T

Power-up

: Assumes a linear ramp from 0V to V

DD

(min.) within 200 ms. During this time V

IH

< V

DD

and V

DDQ

< V

DD

.

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