Rainbow Electronics AT28C64X - Manual

1
Features
• Fast Read Access Time – 120 ns
• Fast Byte Write – 200 µs or 1 ms
• Self-timed Byte Write Cycle
– Internal Address and Data Latches
– Internal Control Timer
– Automatic Clear Before Write
• Direct Microprocessor Control
– READY/BUSY Open Drain Output
– DATA Polling
• Low Power
– 30 mA Active Current
– 100
µA CMOS Standby Current
• High Reliability
– Endurance: 10 4 or 10 5 Cycles
– Data Retention: 10 Years
• 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-wide Pinout
• Commercial and Industrial Temperature Ranges
Description
The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-
trically erasable and programmable read only memory with popular, easy-to-use fea-
tures. The device is manufactured with Atmel’s reliable nonvolatile technology.
64K (8K x 8)
Parallel
EEPROMs
AT28C64
AT28C64X
Rev. 0001H–12/99
Pin Configurations
Pin Name Function
A0 - A12 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
RDY/BUSY Ready/Busy Output
NC No Connect
DC Don’t Connect
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
LCC, PLCC
Top View
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4 3 2 1
32 31 30
14 15 16 17 18 19 20
I/O1 I/O2 VSS
DC
I/O3 I/O4 I/O5
A7 A12 RDY/BUSY (or NC) DC VCC WE NC
(continued)
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RDY/BUSY (or NC)
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3