Rainbow Electronics AT49BV512 User Manual

Features, Description, Pin configurations

Features

•

Single Supply Voltage Range, 2.7V to 3.6V

•

Single Supply for Read and Write

•

Fast Read Access Time – 70 ns

•

Internal Program Control and Timer

•

8K Bytes Boot Block with Lockout

•

Fast Erase Cycle Time – 10 Seconds

•

Byte-by-Byte Programming – 30 µs/Byte Typical

•

Hardware Data Protection

•

DATA Polling for End of Program Detection

•

Low Power Dissipation

– 25 mA Active Current
– 50 µA CMOS Standby Current

•

Typical 10,000 Write Cycles

Description

The AT49BV512 is a 3-volt only, 512K Flash memories organized as 65,536 words of
8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the
devices offer access times to 70 ns with power dissipation of just 90 mW over the
commercial temperature range. When the devices are deselected, the CMOS standby
current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49BV512 does not require
high input voltages for programming. Three-volt only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV512 is performed by erasing

512K (64K x 8)
Single 2.7-volt
Battery-Voltage

™

Flash Memory

AT49BV512

Rev. 1026E–FLASH–06/02

VSOP Top View (8 x 14 mm) or

TSOP Top View (8 x 20 mm)

Type 1

Pin Configurations

Pin Name

Function

A0 - A15

Addresses

Chip Enable

Output Enable

Write Enable

I/O0 - I/O7

Data Inputs/Outputs

No Connect

A11

A13

A14

VCC

A15

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

DIP Top View

PLCC Top View

A15

A12

I/O0

I/O1

I/O2

GND

VCC

A14

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0

A14

A13

A11

A10

I/O7

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

A12

A15

VCC

Table of contents

Rainbow Electronics AT49BV512 User Manual

Features, Description, Pin configurations

Document Outline