Electro-optical performance, Th7834c – Rainbow Electronics TH7834C User Manual
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TH7834C
1997A–IMAGE–05/02
Electro-optical
Performance
•
General measurement conditions: Tc = 25°C; Ti = 1 ms; F
Φ
LA
, F
Φ
LB
, F
Φ
LC
, F
Φ
LD
=
5 MHz, readout through 4 outputs.
•
Light source: tungsten filament lamp (2,854 K) + BG 38 filter (2 mm thick) + F/3.5
aperture. The BG 38 filter limits the spectrum to 700 nm. In these conditions,
1 µJ/cm
2
corresponds to 3.5 lux.s.
•
Typical operating conditions (see Table 1, 2, 3 and 4). First and last pixels of the
photosensitive line, as well as reference elements, are excluded from the
specification.
•
Test without antiblooming, except for AE max.
Notes:
1. Value measured with respect to zero reference level.
2. Conversion factor is typically: 6 µV/e-.
3. Without antiblooming:
Φ
A1-2
=
Φ
A3-4
= 0V.
4. VOS = average output voltage; PRNU for each output, in 4 output operating mode.
5. Measured in Correlated Double Sampling (C.D.S.) mode.
6. V
DS
and DSNU vary with temperature.
7. Residual signal after line readout, at VOS= 1V.
8. Line acquisition with Phi-A at high level. AE max = maximum signal along the line (to test all the antiblooming sites).
Table 6. Electro-optical Performance
Parameter
Symbol
Value
Unit
Remarks
Min.
Typ.
Max.
Saturation Output Voltage With
Antiblooming OFF
V
SAT
2
3
V
Saturation Exposure
E
SAT
0.6
µJ/cm
2
Responsitivity
R
3.5
5
V/µJ/cm
2
Photo Response Non-uniformity
Excluding Single Defects
PRNU
± 6
± 10
% VOS
VOS = 1.0V
Contrast Transfer Function At Nyquist
Frequency (77 Ip/mm)
at 500 nm
at 600 nm
at 700 nm
CTF
75
62
47
%
%
%
VOS = 1.5V
For white level
Temporal Noise In Darkness (rms)
300
µV
Dynamic Range (Relative to rms
Noise)
D
R
10000
Pixel Average Dark Signal
V
DS
110
250
µV/ms
Dark Signal Non-uniformity
DSNU
90
400
µV/ms
Peak to peak
Register Single Stage Transfer
Efficiency
1 -
ε
0.99998
0.999998
VOS = 1V
Lag (Vertical Charge Transfer
Efficiency)
VCTE
0.1
0.5
%
Antiblooming Efficiency
AE max
<1
15
mV