Rainbow Electronics W27E512 - Manual (Page 7)

W27E512
Publication Release Date: November 1999
- 7 - Revision A8
DC PROGRAMMING CHARACTERISTICS
(V CC = 5.0V ±10%, T
A = 25 ° C ±5° C)
PARAMETER SYM. CONDITIONS LIMITS UNIT
MIN. TYP. MAX.
Input Load Current I LI V IN = V IL or V IH -10 - 10 µA
V CC Program Current I CP CE = V IL ,
OE /V PP = V PP
- - 30 mA
V PP Program Current I PP CE = V IL ,
OE /V PP = V PP
- - 30 mA
Input Low Voltage V IL - -0.3 - 0.8 V
Input High Voltage V IH - 2.4 - 5.5 V
Output Low Voltage (Verify) V OL I OL = 2.1 mA - - 0.45 V
Output High Voltage (Verify) V OH I OH = -0.4 mA 2.4 - - V
A9 Silicon I.D. Voltage V ID - 11.5 12.0 12.5 V
V PP Program Voltage V PP - 11.75 12.0 12.25 V
V CC Supply Voltage (Program) V CP - 4.5 5.0 5.5 V
AC PROGRAMMING/ERASE CHARACTERISTICS
(V CC = 5.0V ±10%, T
A = 25 ° C ±5° C)
PARAMETER SYM. LIMITS UNIT
MIN. TYP. MAX.
OE /V PP Pulse Rise Time
T PRT 50 - - nS
Data Setup Time T DS 2.0 - - µS
CE Program Pulse Width
T PWP 95 100 105 µS
CE Erase Pulse Width
T PWE 95 100 105 mS
Data Hold Time T DH 2.0 - - µS
OE /V PP Setup Time
T OES 2.0 - - µS
OE /V PP Hold Time
T OEH 2.0 - - µS
Data Valid from CE
T DV1 25 - 1 µS
Data Valid from Address Change T DV2 25 - 1 µS
CE High to Output High Z
T DFP 0 - 130 nS
Address Setup Time T AS 2.0 - - µS
Address Hold Time T AH 0 - - µS
Address Hold Time after CE High (Erase)
T AHC 2.0 - - µS
OE /V PP Valid after CE High
T VS 2.0 - - µS
OE /V PP Recovery Time
T VR 2.0 - - µS
Address Access Time during Erase Verify (V CC = 3.75V) T ACV - - 250 nS
Output Enable Access Time during Erase Verify (V CC = 3.75V) T OEV - - 150 nS
Note: V CC must be applied simultaneously or before V PP and removed simultaneously or after V PP .