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Qdr ii sram, Figure 3: fpga connections to bank1 of qdrii, Page 15 of 34 – Sundance SMT398VP User Manual

Page 15

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4.1.4.7.

QDR II SRAM

Up to 4 Mbytes of QDR II SRAM

The memory is available as 2 independent banks of QDRII. Each bank is arranged as
follows:

Figure 3: FPGA connections to Bank1 of QDRII

QQ[35:0]

QD[35:0]

NC + QSA[16:0]

QWn/QRn

QK/QKn, QC/QCn (output)

CQ/CQn (input)

4

2

R = 50 Ohms

V

TERM

=

V

REF/2

R = 50 Ohms

36
36
20

20

2

Q/Q

n

C/Cn

K/
Kn

Ct
rl

Ad
dr

D

Q

QDRII

Bank x

36

36

2

V

TERM

=

V

REF/2

XC2VP

4 word burst-QDR II at 200MHz in 2 independent banks of 36-bits wide data busses.
The aggregate throughput for data transfers with the QDR II is 28.8 Gb/s, or 400
Mb/s per pin for a 36-bit write bus and a 36-bit read bus operating in DDR mode at
200 MHz.

Each bank is fully independent with separate address, control and data busses.

The 2 devices used are

Samsung K7R163684B-FC20

. Alternative part numbers,

fully compatible can be fitted depending on availability at time of order.

Alternative part numbers are:

Cypress CY7C1315AV18-200BZC

or

NEC

μ

PD44165364F5-E50-EQ1

Specification and implementation documents are available for design details about
using the QDRII .

Document No.

S M T 3 9 8 V P - D 0 0 0 0 5 8 H - g u i d e . d o c

Revision

2 . 4 . 2

Date

0 8 / 0 2 / 0 7

Page 15 of 34