Cypress CY14B108L - Manual (Page 9)

ADVANCE
CY14B108L, CY14B108N
Document Number: 001-45523 Rev. *A Page 9 of 20
AC Switching Characteristics
In the following table, the AC switching characteristics are listed.
Parameters
Description
20 ns 25 ns 45 ns
Unit
Cypress
Parameters
Alt
Parameters
Min Max Min Max Min Max
SRAM Read Cycle
t
ACE
t
ACS
Chip Enable Access Time 20 25 45 ns
t
RC
[10] t
RC
Read Cycle Time 20 25 45 ns
t
AA
[11] t
AA
Address Access Time 20 25 45 ns
t
DOE
t
OE
Output Enable to Data Valid 10 12 20 ns
t
OHA
t
OH
Output Hold After Address Change 3 3 3 ns
t
LZCE
[12]
t
LZ
Chip Enable to Output Active 3 3 3 ns
t
HZCE
[12]
t
HZ
Chip Disable to Output Inactive 8 10 15 ns
t
LZOE
[12] t
OLZ
Output Enable to Output Active 0 0 0 ns
t
HZOE
[12] t
OHZ
Output Disable to Output Inactive 8 10 15 ns
t
PU
[9]
t
PA
Chip Enable to Power Active 0 0 0 ns
t
PD
[9]
t
PS
Chip Disable to Power Standby 20 25 45 ns
t
DBE
- Byte Enable to Data Valid 10 12 20 ns
t
LZBE
- Byte Enable to Output Active 0 0 0 ns
t
HZBE
- Byte Disable to Output Inactive 8 10 15 ns
SRAM Write Cycle
t
WC
t
WC
Write Cycle Time 20 25 45 ns
t
PWE
t
WP
Write Pulse Width 15 20 30 ns
t
SCE
t
CW
Chip Enable To End of Write 15 20 30 ns
t
SD
t
DW
Data Setup to End of Write 8 10 15 ns
t
HD
t
DH
Data Hold After End of Write 0 0 0 ns
t
AW
t
AW
Address Setup to End of Write 15 20 30 ns
t
SA
t
AS
Address Setup to Start of Write 0 0 0 ns
t
HA
t
WR
Address Hold After End of Write 0 0 0 ns
t
HZWE
[12,13]
t
WZ
Write Enable to Output Disable 8 10 15 ns
t
LZWE
[12] t
OW
Output Active after End of Write 3 3 3 ns
t
BW
- Byte Enable to End of Write 15 20 30 ns
Notes
10. WE must be HIGH during SRAM read cycles.
11. Device is continuously selected with CE and OE both LOW.
12. Measured ±200 mV from steady state output voltage.
13. If WE is LOW when CE goes LOW, the output goes into high impedance state.
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