Cypress CY14B108M User Manual
Features, Functional description, Logic block diagram
PRELIMINARY
CY14B108K, CY14B108M
8 Mbit (1024K x 8/512K x 16) nvSRAM with
Real Time Clock
Cypress Semiconductor Corporation
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Document #: 001-47378 Rev. **
Revised April 01, 2009
Features
■
20 ns, 25 ns, and 45 ns access times
■
Internally organized as 1024K x 8 (CY14B108K) or 512K x 16
(CY14B108M)
■
Hands off automatic STORE on power down with only a small
capacitor
■
STORE to QuantumTrap
®
nonvolatile elements is initiated by
software, device pin, or AutoStore
®
on power down
■
RECALL to SRAM initiated by software or power up
■
High reliability
■
Infinite Read, Write, and RECALL cycles
■
200,000 STORE cycles to QuantumTrap
■
20 year data retention
■
Single 3V +20%, –10% operation
■
Data integrity of Cypress nvSRAM combined with full featured
Real Time Clock (RTC)
■
Watchdog timer
■
Clock alarm with programmable interrupts
■
Capacitor or battery backup for RTC
■
Commercial and industrial temperatures
■
44 and 54-pin TSOP II package
■
Pb-free and RoHS compliance
Functional Description
The Cypress CY14B108K/CY14B108M combines a 8-Mbit
nonvolatile static RAM with a full featured RTC in a monolithic
integrated circuit. The embedded nonvolatile elements incor-
porate QuantumTrap technology producing the world’s most
reliable nonvolatile memory. The SRAM is read and written
infinite number of times, while independent nonvolatile data
resides in the nonvolatile elements.
The RTC function provides an accurate clock with leap year
tracking and a programmable, high accuracy oscillator. The
alarm function is programmable for periodic minutes, hours,
days, or months alarms. There is also a programmable watchdog
timer for process control.
STATIC RAM
ARRAY
2048 X 2048 X 2
R
O
W
D
E
C
O
D
E
R
COLUMN I/O
COLUMN DEC
I
N
P
U
T
B
U
F
F
E
R
S
POWER
CONTROL
STORE/RECALL
CONTROL
Quatrum
Trap
2048 X 2048 X 2
STORE
RECALL
V
CC
V
CAP
HSB
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
SOFTWARE
DETECT
A
14
- A
2
OE
CE
WE
BHE
BLE
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
17
A
18
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
DQ
8
DQ
9
DQ
10
DQ
11
DQ
12
DQ
13
DQ
14
DQ
15
RTC
MUX
A
19
- A
0
X
out
X
in
INT
V
RTCbat
V
RTCcap
A
19
Logic Block Diagram
Notes
1. Address A
0
- A
19
for x8 configuration and Address A
0
- A
18
for x16 configuration.
2. Data DQ
0
- DQ
7
for x8 configuration and Data DQ
0
- DQ
15
for x16 configuration.
3. BHE and BLE are applicable for x16 configuration only.
Document Outline
- Features
- Functional Description
- Logic Block Diagram[1, 2, 3]
- Device Operation
- SRAM Read
- SRAM Write
- AutoStore Operation
- Hardware STORE (HSB) Operation
- Hardware RECALL (Power Up)
- Software STORE
- Software RECALL
- Preventing AutoStore
- Data Protection
- Noise Considerations
- Best Practices
- Real Time Clock Operation
- Maximum Ratings
- Operating Range
- DC Electrical Characteristics
- Data Retention and Endurance
- Capacitance
- Thermal Resistance
- AC Test Conditions
- AC Switching Characteristics
- Switching Waveforms
- Switching Waveforms
- Switching Waveforms
- AutoStore/Power Up RECALL
- Switching Waveforms
- Software Controlled STORE and RECALL Cycle
- Hardware STORE Cycle
- Truth Table For SRAM Operations
- Ordering Information
- Package Diagrams
- Document History Page
- Sales, Solutions, and Legal Information