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Ac test loads and waveforms, Switching characteristics – Cypress CY7C1019CV33 User Manual

Page 4

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CY7C1019CV33

Document #: 38-05130 Rev. *F

Page 4 of 10

AC Test Loads and Waveforms

[4]

Switching Characteristics

Over the Operating Range

[5]

Parameter

Description

-10

-12

-15

Unit

Min.

Max.

Min.

Max.

Min.

Max.

Read Cycle

t

RC

Read Cycle Time

10

12

15

ns

t

AA

Address to Data Valid

10

12

15

ns

t

OHA

Data Hold from Address Change

3

3

3

ns

t

ACE

CE LOW to Data Valid

10

12

15

ns

t

DOE

OE LOW to Data Valid

5

6

7

ns

t

LZOE

OE LOW to Low Z

0

0

0

ns

t

HZOE

OE HIGH to High Z

[6, 7]

5

6

7

ns

t

LZCE

CE LOW to Low Z

[7]

3

3

3

ns

t

HZCE

CE HIGH to High Z

[6, 7]

5

6

7

ns

t

PU

[8]

CE LOW to Power-Up

0

0

0

ns

t

PD

[8]

CE HIGH to Power-Down

10

12

15

ns

Write Cycle

[9, 10]

t

WC

Write Cycle Time

10

12

15

ns

t

SCE

CE LOW to Write End

8

9

10

ns

t

AW

Address Set-Up to Write End

8

9

10

ns

t

HA

Address Hold from Write End

0

0

0

ns

t

SA

Address Set-Up to Write Start

0

0

0

ns

t

PWE

WE Pulse Width

7

8

10

ns

t

SD

Data Set-Up to Write End

5

6

8

ns

t

HD

Data Hold from Write End

0

0

0

ns

t

LZWE

WE HIGH to Low Z

[7]

3

3

3

ns

t

HZWE

WE LOW to High Z

[6, 7]

5

6

7

ns

Notes:

4. AC characteristics (except High-Z) for all speeds are tested using the Thevenin load shown in Figure (a). High-Z characteristics are tested for all speeds using

the test load shown in Figure (c).

5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
6. t

HZOE

, t

HZCE

, and t

HZWE

are specified with a load capacitance of 5 pF as in part (d) of AC Test Loads. Transition is measured

±500 mV from steady-state voltage.

7. At any given temperature and voltage condition, t

HZCE

is less than t

LZCE

, t

HZOE

is less than t

LZOE

, and t

HZWE

is less than t

LZWE

for any given device.

8. This parameter is guaranteed by design and is not tested.
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of

any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

10. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t

HZWE

and t

SD

.

90%

10%

3.0V

GND

90%

10%

ALL INPUT PULSES

3.3V

OUTPUT

30 pF

(a)

R 317

R2

351

Rise Time: 1 V/ns

Fall Time: 1 V/ns

(b)

3.3V

OUTPUT

5 pF

(c)

R 317

R2
351

High-Z characteristics:

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