Baumer NE216 User Manual
Page 3
NE216
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3. Writing of memory locations
All memory locations indexed with a line number in the programming plan enable writing (programming),
except for the separating lines (indexed by dashes) and lines 1 and 5.
Protocol:
Counter response upon parameterization is the same as for a read command for the respective line.
Programming of memory locations is enabled both in RUN and PGM mode.
Programming in RUN mode:
Parameterization in lines 21-23, 30-33, 35, 43, 44 and 51-54 will not become effective until a switching
operation from PGM mode to RUN mode. Please see chapter 5.2 for how to switch to PGM mode. The
parameters in all other lines will be immediately effective after entry.
Any parameterization done in RUN mode will only be retained non-volatile after having accomplished
the switching operation from PGM to RUN mode. If omitted, the previously programmed parameters
will be restored in the event of power failure.
Write-command (general):
3.1. Examples for writing of memory locations
Following applies to the examples below:
Counter address (identifier) = 35; counter in mode = R (RUN)
Programming the start count SC (line =04, start count=360)
Command:
Response:
Programming a negative start count SC (line=04, start count=-360)
Command:
Response:
Programming the scaling factor SF (line =07, parameter =1.0000)
Command:
Response:
Programming the count mode (line =30, count mode=1)
Command:
Response:
Programming the output time P1 at Latch(line=41)
Command:
Response:
Programming the device identifier (line=54, device identifier=27)
Command:
Response: