Silicon Power CCS TA 43N40_N-Type Semiconductor Discharge Switch, ThinPak - Manual (Page 2)

Performance Characteristics T
J
=25 o C unless otherwise specified Measurements
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage V
DR
V
GK
=0, I
A
=1mA Note: 3 4 kV
Anode-Cathode Off-State Current I
D
V
GK
=0V, V
AK
=4000V T
J
=25 o C 20 100 uA
Note: 3 & 4 T
J
=125 o C 100 800 uA
Turn-On Threshold Current V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA , see Note: 3 & 5 70 mA
Gate-Cathode Leakage Current I
GK(lkg)
V
GK
=-9V, see Note: 1 -20 uA
Anode-Cathode On-State Voltage V
T
I
T
=100A T
J
=25 o C 1.8 V
Ig = 500 mA T
J
=125 o C 2 V
Turn-on Delay Time t
D(ON)
C=0.75 uF Capacitor discharge 160 ns
Pk Rate of Change of Current (measured) dI/dt Ls=150nH 25 kA/us
Peak Anode Current I
P
R
gk
= 10 ohms V
AK
= 3750 V 2950 A
Gate di/dt =100 A/us T
c
=25 ° C
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
CCSTA43N40A10
Solidtron TM
N-Type Semiconductor Discharge Switch, ThinPak TM
Notes:
1. Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode.
2. Case Exterior Assummed to be 0.002" of 63Sn/37Pb solder applied directly to cathode bond area of ThinPak.
3. Performance guarenteed by design only.
4. Production testing is limited to 2KV prior to encapsulation.
5. Characterization accomplished using R
gk
=10 ohms.
Typical Performance Curves (unless otherwise specified) Figure 1.
Measured Low current
On-State Characteristics.
CAO 05/28/09
5. Characterization accomplished using R
gk
=10 ohms.
CAO 05/28/09