Silicon Power CCS TA 14N40_N-Type Semiconductor Discharge Switch, ThinPak - Manual

Description Package Size - 12
Schematic Symbol
Features
ThinPak TM
Anode
Bond Area on
bottom
This current controlled Solidtron TM (CCS) discharge switch is an
n-type Thyristor in a high performance ThinPak TM package. The
device gate is similar to that found on a traditional GTO
Thyristor.
The CCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
high di/dt capability. This semiconductor is intended to be a
solid state replcement for spark or gas type devices commonly
used in pulse power applications.
The ThinPak TM Package is a perforated, metalized ceramic
substrate attached to the silicon using 302 o C solder. It's small
size and low profile make it extremely attractive for high di/dt
applications where stray series inductance must be kept to a
minimum.
4000V Peak Off-State Voltage
10 kA Repetitive Ipk Capability Low On-State Voltage
Low trigger current
Anode (A)
Gate (G)
Cathode contacts
Gate contact
Solidtron TM
N-Type Semiconductor Discharge Switch,
ThinPak TM
Data Sheet (Rev 0 - 05/12/08)
CCSTA14N40A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
Absolute Maximum Ratings
SYMBOL VALUE UNITS
Peak Off-State Voltage V
DRM
4 kV
Peak Reverse Voltage V
RRM
-5 V
Off-State Rate of Change of Voltage Immunity* dv/dt 1 kV/uSec
Continuous Anode Current at Tj = 125 o C I
A110
100 A
Repetitive Peak Anode Current (Pulse Width=10uSec) I
ASM
10.0 kA
Nonrepetitive Peak Anode Current (Pulse Width=10uSec) I
ASM
14 kA
Rate of Change of Current dI/dt 30 kA/uSec
Peak Gate Current (1 uS)
IGpk
100 A
Max. Reverse Gate-Cathode Voltage V
GR
-9 V
Maximum Junction Temperature T
JM
125 o C
Maximum Soldering Temperature (Installation) 260 o C
This SILICON POWER product is protected by one or more of the following U.S. Patents:
CAO 05/28/09
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890 5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635 5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773 5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957 4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206 5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671 4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668 5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174 4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
10 kA Repetitive Ipk Capability
30 KA/uS di/dt Capability Low trigger current
Low Inductance Package
Cathode (K)
Preliminary Data Sheet - Product Status : First Production : This data sheet contains preliminary data . Supplementary data will be
published at a later date. Silicon Power reserves the right to make changes at any time without notice.
* Requires a 10 ohm gate to cathode shorting resistor.
CAO 05/28/09