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Silicon Power SMCT TA 65N14_N-MOS VCS, ThinPak User Manual

Solidtron, Thinpak, N-mos vcs, thinpak

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Description

Package

Size - 6

Schematic Symbol

Features

Gate Bond Area

Gate Return

This voltage controlled Solidtron

TM

(VCS) discharge switch

utilizes an n-type MOS-Controlled Thyristor mounted on a
ThinPak

TM

, ceramic "chip-scale" hybrid.

The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.

The ThinPak

TM

Package is a perforated, metalized ceramic

substrate attached to the silicon using 302

o

C solder. An epoxy

underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small size
and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.

1400V Peak Off-State Voltage
65A Continuous Rating
6kA Surge Current Capability
>100kA/uSec dI/dt Capability

<150nSec Turn-On Delay
Low On-State Voltage
MOS Gated Control
Low Inductance Package

Anode (A)

Gate (G)

Cathode (K)

Gate Return (GR)

ThinPak

TM

Cathode Bond Area

Anode

Solidtron

TM

N-MOS VCS, ThinPak

Data Sheet (Rev 0 - 02/15/08)

SMCTTA65N14A10

275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700

Absolute Maximum Ratings

SYMBOL

VALUE

UNITS

Peak Off-State Voltage

V

DRM

1400

V

Peak Reverse Voltage

V

RRM

-5

V

Off-State Rate of Change of Voltage Immunity

dv/dt

5000

V/uSec

Continuous Anode Current at 110

o

C

I

A110

65

A

Repetitive Peak Anode Current (Pulse Width=1uSec)

I

ASM

6000

A

Rate of Change of Current

dI/dt

125

kA/uSec

Continuous Gate-Cathode Voltage

V

GKS

+/-20

V

Peak Gate-Cathode Voltage

V

GKM

+/-25

V

Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State

V

GK(OFF-MIN)

-5

V

Maximum Junction Temperature

T

JM

150

o

C

Maximum Soldering Temperature (Installation)

260

o

C

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890

5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635

5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773

5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957

4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206

5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671

4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668

5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174

4,644,637
4,374,389
4,750,666
4,429,011
5,293,070

Cathode (K)