Silicon Power SMCT TA 65N14_N-MOS VCS, ThinPak - Manual

Description Package Size - 6
Schematic Symbol
Features
Gate Bond Area
Gate Return
This voltage controlled Solidtron TM (VCS) discharge switch
utilizes an n-type MOS-Controlled Thyristor mounted on a
ThinPak
TM , ceramic "chip-scale" hybrid.
The VCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with
extremely high dI/dt capability. This semiconductor is intended
for the control of high power circuits with the use of very small
amounts of input energy and is ideally suited for capacitor
discharge applications.
The ThinPak TM Package is a perforated, metalized ceramic
substrate attached to the silicon using 302 o C solder. An epoxy
underfill is applied to protect the high voltage termination from
debris. All exterior metal surfaces are tinned with 63pb/37sn
solder providing the user with a circuit ready part. It's small size
and low profile make it extremely attractive to high dI/dt
applications where stray series inductance must be kept to a
minimum.
1400V Peak Off-State Voltage
65A Continuous Rating
6kA Surge Current Capability
>100kA/uSec dI/dt Capability <150nSec Turn-On Delay
Low On-State Voltage
MOS Gated Control
Low Inductance Package
Anode (A)
Gate (G)
Cathode (K)
Gate Return (GR)
ThinPak TM
Cathode Bond Area
Anode
Solidtron TM
N-MOS VCS, ThinPak
Data Sheet (Rev 0 - 02/15/08)
SMCTTA65N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Absolute Maximum Ratings
SYMBOL VALUE UNITS
Peak Off-State Voltage V
DRM
1400 V
Peak Reverse Voltage V
RRM
-5 V
Off-State Rate of Change of Voltage Immunity dv/dt 5000 V/uSec
Continuous Anode Current at 110 o C I
A110
65 A
Repetitive Peak Anode Current (Pulse Width=1uSec) I
ASM
6000 A
Rate of Change of Current dI/dt 125 kA/uSec
Continuous Gate-Cathode Voltage V
GKS
+/-20 V
Peak Gate-Cathode Voltage V
GKM
+/-25 V
Minimum Negative Gate-Cathode Voltage Required for Garanteed Off-State V
GK(OFF-MIN)
-5 V
Maximum Junction Temperature T
JM
150 o C
Maximum Soldering Temperature (Installation) 260 o C
This SILICON POWER product is protected by one or more of the following U.S. Patents:
CAO 05/28/09
5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890 5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635 5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773 5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957 4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206 5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671 4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668 5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174 4,644,637
4,374,389
4,750,666
4,429,011
5,293,070
Cathode (K)