beautypg.com

Silicon Power CCS TA 43N40_N-Type Semiconductor Discharge Switch, ThinPak User Manual

Solidtron, Thinpak, N-type semiconductor discharge switch, thinpak

background image

Description

Package

Size - 9

Schematic Symbol

Features

ThinPak

TM

Anode

Bond Area on

bottom

This current controlled Solidtron

TM

(CCS) discharge switch is an

n-type Thyristor in a high performance ThinPak

TM

package. The

device gate is similar to that found on a traditional GTO Thyristor.

The CCS features the high peak current capability and low On-
state voltage drop common to SCR thyristors combined with high
di/dt capability. This semiconductor is intended to be a solid
state replcement for spark or gas type devices commonly used in
pulse power applications.

The ThinPak

TM

Package is a perforated, metalized ceramic

substrate attached to the silicon using 302

o

C solder. It's small

size and low profile make it extremely attractive for high di/dt
applications where stray series inductance must be kept to a
minimum.

4000V Peak Off-State Voltage
5 kA Repetitive Ipk Capability
25 KA/uS di/dt Capability

Low On-State Voltage
Low trigger current
Low Inductance Package

Anode (A)

Gate (G)

Cathode contacts

Gate contact

275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700

CCSTA43N40A10

Solidtron

TM

N-Type Semiconductor Discharge Switch, ThinPak

TM

Absolute Maximum Ratings

SYMBOL

VALUE

UNITS

Peak Off-State Voltage

V

DRM

4

kV

Peak Reverse Voltage

V

RRM

-5

V

Off-State Rate of Change of Voltage Immunity*

dv/dt

1

kV/uSec

Continuous Anode Current at Tj = 125

o

C

I

A110

50

A

Repetitive Peak Anode Current (Pulse Width=10uSec)

I

ASM

5.0

kA

Nonrepetitive Peak Anode Current (Pulse Width=10uSec)

I

ASM

8

kA

Rate of Change of Current

dI/dt

25

kA/uSec

Peak Gate Current (1 uS)

IGpk

50

A

Max. Reverse Gate-Cathode Voltage

V

GR

-9

V

Maximum Junction Temperature

T

JM

125

o

C

Maximum Soldering Temperature (Installation)

260

o

C

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316
5,557,656
5,564,226
5,517,058
4,814,283
5,135,890

5,521,436
5,585,310
5,248,901
5,366,932
5,497,013
5,532,635

5,105,536
5,777,346
5,446,316
5,577,656
5,473,193
5,166,773

5,209,390
5,139,972
5,103,290
5,028,987
5,304,847
5,569,957

4,958,211
5,111,268
5,260,590
5,350,935
5,640,300
5,184,206

5,206,186
5,757,036
5,777,346
5,995,349
4,801,985
4,476,671

4,857,983
4,888,627
4,912,541
5,424,563
5,399,892
5,468,668

5,082,795
4,980,741
4,941,026
4,927,772
4,739,387
4,648,174

4,644,637
4,374,389
4,750,666
4,429,011
5,293,070

25 KA/uS di/dt Capability

Low Inductance Package

Cathode (K)

CAO 05/28/09