Silicon Power VCS FF 05N14_N-MOS VCS, F-Pak - Manual (Page 2)

Performance Characteristics
T
J
=25 o C unless otherwise specified Measurements
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage V
(BR)
V
GK
=-5, I
A
=1mA 1400 V
Anode-Cathode Off-State Current i
D
V
GE
=-5V, V
AK
=1400V T
C
=25 o C 1 uA
T
C
=50 o C 3 uA
T
C
=125
o
C 5 uA
Gate-Cathode Leakage Current I
GK(lkg)
V
GK
=+/-15V T
C
=25 o C 4 10 nA
T
C
=50 o C 4 10 nA
T
C
=125 o C 5 10 nA
V
T
T
C
=25 o C 1.3 V
Gate-Cathode Turn-On Threshold Voltage V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA 0.8 V
Input Capacitance C
ISS
Bias=6V, Freq.=120Hz 1.55 nF
Turn-on Delay Time t
D(ON)
0.16uF Capacitor Discharge 90 nS
Rate of Change of Current dI/dt T
J
=25
o
C, V
GK
= -5V to +5V 26 kA/uSec
Peak Anode Current I
P
V
AK
=700V, RG=3.0 L
S
=16nH 1660 A
Rate of Change of Current dI/dt 0.15uF Capacitor Discharge 120 kA/uSec
Peak Anode Current I
P
T
J
=25 o C, V
GK
= -5V to +5V 6700 A
V
AK
=1200V, RG=3.0 L
S
=6nH
Anode-Cathode On-State Voltage I
T
= 5A, V
GK
= 5V
VCSFF05N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
fax: 610-407-3688 Solidtron TM
N-MOS VCS, F-Pak
Data Sheet (Rev 6 - 06/17/11)
Typical Performance Curves T
J
=25 o C unless otherwise specified
Figure 1. Turn-On Delay Characteristics
R
G
=3.0
, T
J
=25
o
C