Silicon Power SMCT AC 05N14_N-MOS VCS, Bare-Die - Manual (Page 4)

Package Dimensions
SMCTAC05N14A10
Solidtron TM
N-MOS VCS, Bare-Die
Data Sheet (Rev 1 - 03/30/09)
Pins
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
fax: 610-407-3688
Figure 5. Critical Die Dimensions
CAO 05/28/09
General Handling Precautions
1. Surface condition of the bare die prior to die attachment should be free of defects
and contamination. Any contamination on the die may degrade the electrical and
thermal performance of the device. Proper cleaning prior to attachment and
encapsulation material is necessary to prevent arching, adheshion of the
encapsulant, or solderability.
2. Proper procedures and equipment must be used when handling bare die.
3. Installation reflow temperature should not exceed 260 o C or internal package
degradation may result.
4. As with all MOS gated devices, proper handling procedures must be observed to
prevent electrostatic discharge which may result in permanent damage to the gate
of the device
'ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC
DISCHARGE SENSITIVE DEVICES IN ALL ASSEMBLY AND TEST AREAS'
All Dimensions in inch
CAO 05/28/09