Solidtron, N-mos vcs, bare-die, Performance characteristics – Silicon Power SMCT AC 05N14_N-MOS VCS, Bare-Die User Manual
Page 2: Typical performance curves, Figure 1. turn-on delay characteristics r, 0ω, t
Performance Characteristics
T
J
=25
o
C unless otherwise specified
Measurements
Parameters
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Anode to Cathode Breakdown Voltage
V
(BR)
V
GK
=-5, I
A
=1mA
1400
V
Anode-Cathode Off-State Current
i
D
V
GE
=-5V, V
AK
=1400V
T
C
=25
o
C
1
uA
T
C
=50
o
C
3
uA
T
C
=125
o
C
5
uA
Gate-Cathode Leakage Current
I
GK(lkg)
V
GK
=+/-15V
T
C
=25
o
C
4
10
nA
T
C
=50
o
C
4
10
nA
T
C
=125
o
C
5
10
nA
V
T
T
C
=25
o
C
1.3
V
Gate-Cathode Turn-On Threshold Voltage
V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA
0.8
0.8
1.2
V
Input Capacitance
C
ISS
Bias=6V, Freq.=120Hz
1.55
nF
Turn-on Delay Time
t
D(ON)
0.16uF Capacitor Discharge
90
nS
Rate of Change of Current
dI/dt
T
J
=25
o
C, V
GK
= -5V to +5V
26
kA/uSec
Peak Anode Current
I
P
V
AK
=700V, RG=3.0Ω, L
S
=16nH
1660
A
Anode-Cathode On-State Voltage
I
T
= 5A, V
GK
= 5V
SMCTAC05N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
fax: 610-407-3688
Solidtron
TM
N-MOS VCS, Bare-Die
Data Sheet (Rev 1 - 03/30/09)
Typical Performance Curves
T
J
=25
o
C unless otherwise specified
Figure 1.
Turn-On Delay Characteristics
R
G
=3.0Ω, T
J
=25
o
C
CAO 05/28/09
CAO 05/28/09