Communication Concepts 2M-1KW 2 Meter 1KW Amplifier - Manual (Page 2)

2
RF Device Data
Freescale Semiconductor
MRFE6VP61K25HR6 MRFE6VP61K25HSR6
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2 (Minimum)
Machine Model (per EIA/JESD22--A115) B (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Electrical Characteristics (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 μAdc
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mA)
V
(BR)DSS
125 — — Vdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 μAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 20 μAdc
On Characteristics
Gate Threshold Voltage (1)
(V
DS
= 10 Vdc, I
D
= 1776 μAdc)
V
GS(th)
1.7 2.2 2.7 Vdc
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
V
GS(Q)
1.4 2.2 2.9 Vdc
Drain--Source On--Voltage (1)
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
— 0.15 — Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 2.8 — pF
Output Capacitance
(V
DS
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
— 185 — pF
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
C
iss
— 562 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 1250 W Peak (250 W Avg.), f = 230 MHz,
Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Power Gain G
ps
23.0 24.0 26.0 dB
Drain Efficiency η D
72.5 74.0 — %
Input Return Loss IRL — --14 --10 dB
Pulsed RF Performance (In Freescale Application Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ
= 100 mA, P
out
= 1250 W Peak
(250 W Avg.), f = 230 MHz, Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
Load Mismatch
(VSWR 65:1 at all Phase Angles)
Ψ No Degradation in Output Power
1. Each side of device measured separately.