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Communication Concepts MJE243 User Manual

Communication Concepts Hardware

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© Semiconductor Components Industries, LLC, 2009

April, 2009 − Rev. 13

1

Publication Order Number:

MJE243/D

MJE243 - NPN,

MJE253 - PNP

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

Features

High Collector−Emitter Sustaining Voltage −

V

CEO(sus)

= 100 Vdc (Min)

High DC Current Gain @ I

C

= 200 mAdc

h

FE

= 40−200
= 40−120

Low Collector−Emitter Saturation Voltage −

V

CE(sat)

= 0.3 Vdc (Max) @ I

C

= 500 mAdc

High Current Gain Bandwidth Product −

f

T

= 40 MHz (Min) @ I

C

= 100 mAdc

Annular Construction for Low Leakages

I

CBO

= 100 nAdc (Max) @ Rated V

CB

Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

V

CEO

100

Vdc

Collector−Base Voltage

V

CB

100

Vdc

Emitter−Base Voltage

V

EB

7.0

Vdc

Collector Current

− Continuous

− Peak

I

C

4.0

8.0

Adc

Base Current

I

B

10

Adc

Total Power Dissipation @ T

C

= 25_C

Derate above 25_C

P

D

15

120

W

mW/_C

Total Power Dissipation @ T

A

= 25_C

Derate above 25_C

P

D

1.5

12

W

mW/_C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

q

JC

8.34

_C/W

Thermal Resistance,

Junction−to−Ambient

q

JA

83.4

_C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MJE243

TO−225

500 Units/Box

4.0 AMPERES

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

http://onsemi.com

MJE243G

TO−225

(Pb−Free)

500 Units/Box

TO−225

CASE 77

STYLE 1

2 1

3

MARKING DIAGRAM

YWW

JE2x3G

Y

= Year

WW

= Work Week

JE2x3 = Device Code

x = 4 or 5

G

= Pb−Free Package

Preferred devices are recommended choices for future use
and best overall value.

MJE253

TO−225

500 Units/Box

MJE253G

TO−225

(Pb−Free)

500 Units/Box